Study of surface passivation of InP

Faur, M.; Jenkins, Phillip P.; Goradia, M.; Bailey, Sheila G.; Jayne, D. T.; Weinberg, I.; Goradia, C.

doi:10.1002/sia.740151207

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…The first corresponds to a binding energy of 443.4 eV, while the second is located at 444.4 eV ( Figure 6). Comparison to literature data [39] and considering the weight loss detected in the DTA/TG measurements leads to the assignment of the signal at 444.4 eV to an oxidized In species. This leaves the signal at 443.4 eV for the intermetallic indium in InPd 2 , corresponding to a shift to lower binding energy of around 0.4 eV compared to elemental indium 443.84 eV.…”

Section: In Situ Stabilitymentioning

confidence: 78%

Addressing electronic effects in the semi-hydrogenation of ethyne by InPd2 and intermetallic Ga–Pd compounds

Luo

Villaseca

Friedrich

et al. 2016

Journal of Catalysis

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The intermetallic compound InPd 2 was prepared as single-phase material and used in an unsupported state as catalyst in the semi-hydrogenation of ethyne in a large excess of ethene.InPd 2 showed high activity and selectivity (up to 93%) towards ethene in the temperature range from 478 to 508 K. In addition, the compound revealed high stability during 20 h time on stream at 473 K at 80% selectivity and >90% conversion. Investigations by differential thermal analysis combined with thermogravimetry (DTA/TG) in H 2 and near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) exclude the formation of intermetallic hydrides, phase transitions, decomposition, and the presence of elemental palladium. The stability of InPd 2 under reaction conditions allows addressing the influence of electronic factors on the catalytic properties by comparison to Ga-Pd intermetallic compounds. From the joint results of experiments and first-principles calculations, the electronic influence on the catalytic selectivity is found to be minor; selectivity seems to be largely governed by geometric effects -as suggested earlier by the site-isolation concept -as well as the absence of hydridic hydrogen.

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Section: In Situ Stabilitymentioning

confidence: 78%

Addressing electronic effects in the semi-hydrogenation of ethyne by InPd2 and intermetallic Ga–Pd compounds

Luo

Villaseca

Friedrich

et al. 2016

Journal of Catalysis

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“…[4][5][6]. In the case of Yb-doped InP, there is a lack of reports concerning XPS investigations (see Ref.…”

Section: Introductionmentioning

confidence: 99%

X-Ray Photoelectron Study of Yb-Doped InP

1997

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X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d512 and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d312 peak was found identical to that in Yb metal, whereas the 4d512 peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.

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“…shown in Figure 4F and also in Figure 6A no deep precipitates could be seen in optimized p+n (Cd,S) structures. On the contrary, as shown in Figure 6B in the case of p+n (Zn,S) structures, a large density of Zn,P,-rich deep precipitates could be found even when phosphorus-rich diffusion caps were used [12]. These precipitates (most probably Zn,P& could be easily identified even by EDAX, and might explain why the highest surface hole concentration of our p' n (Zn,S) structures appears to be limited to 1.5 x 10" cm-,.…”

Section: Deep Precipitates and Dislocationsmentioning

confidence: 79%

“…Using higher resolution etching solutions such as HN0,;HBr (1:3) [2], which produce sharp pits on both n-or p-InP, accurate defect revealing of up to 5 x lo6 EP/cm2 is possible [4]. However, due to a relatively large overall etch rate it is not possible to perform EPD revealing inside one given layer of a thin multilayer structure or at the interfaces.…”

Section: O L T a G Ementioning

confidence: 98%

See 1 more Smart Citation

High resolution etchants and electrolytes for accurate surface and deep dislocations and precipitates in InP

Faur

Ghalla²,

Bailey³

et al.

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)

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In an effort to optimize the processing of n+p and p+n InP structures made by thermal diffusion, so as to be able to achieve high efficiency InP solar cells by this method of junction formation, we have developed a number of new etchants and electrolytes for chemical or electrochemical revealing of surface and deep defect densities (EPD, precipitates and diffusion induced dislocations). These new chemical solutions are not only much more convenient to use for large structural defect density revealing of InP substrates and structures as compared to other techniques, such as transmission electron microscopy, but they also have higher resolution and accuracy.

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Study of surface passivation of InP

Cited by 11 publications

References 12 publications

Addressing electronic effects in the semi-hydrogenation of ethyne by InPd2 and intermetallic Ga–Pd compounds

Addressing electronic effects in the semi-hydrogenation of ethyne by InPd2 and intermetallic Ga–Pd compounds

X-Ray Photoelectron Study of Yb-Doped InP

High resolution etchants and electrolytes for accurate surface and deep dislocations and precipitates in InP

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