Study of temperature dependence of breakdown voltage and AC TDDB reliability for thick insulator film deposited by plasma process

Ohguro, T.; Yagi, Yukihiro; Kimura, Koji; Kashiura, Y.; Morioka, Jun; Matsuda, M.; Yoshida, Katsuhiko; Takahashi, Masanori; Ishiguro, A.; Yamada, Masayuki; Urata, Shingo; Tamura, Takashi; Fuji, Yoshihiko; Kamakura, Taku; Ohtsuka, K.; Takano, Akio; Umekawa, Shinichi

doi:10.1016/j.microrel.2020.113948

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“…The second phase is the breakdown phase. When the trap charge’s density accumulated in the first phase reaches a critical value, a complete conductive path will be formed in the MOSFET device’s gate oxide [ 25 ]. This results in the breakdown of the oxide layer.…”

Section: Resultsmentioning

confidence: 99%

Experimental Study on Critical Parameters Degradation of Nano PDSOI MOSFET under TDDB Stress

et al. 2023

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In today’s digital circuits, Si-based MOS devices have become the most widely used technology in medical, military, aerospace, and aviation due to their advantages of mature technology, high performance, and low cost. With the continuous integration of transistors, the characteristic size of MOSFETs is shrinking. Time-dependent dielectric electrical breakdown (TDDB) is still a key reliability problem of MOSFETs in recent years. Many researchers focus on the TDDB life of advanced devices and the mechanism of oxide damage, ignoring the impact of the TDDB effect on device parameters. Therefore, in this paper, the critical parameters of partially depleted silicon-on-insulator (PDSOI) under time-dependent dielectric electrical breakdown (TDDB) stress are studied. By applying the TDDB acceleration stress experiment, we obtained the degradation of the devices’ critical parameters including transfer characteristic curves, threshold voltage, off-state leakage current, and the TDDB lifetime. The results show that TDDB acceleration stress will lead to the accumulation of negative charge in the gate oxide. The negative charge affects the electric field distribution. The transfer curves of the devices are positively shifted, as is the threshold voltage. Comparing the experimental data of I/O and Core devices, we can conclude that the ultra-thin gate oxide device’s electrical characteristics are barely affected by the TDDB stress, while the opposite is true for a thick-gate oxide device.

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Section: Resultsmentioning

confidence: 99%