2021
DOI: 10.21203/rs.3.rs-220299/v1
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Study of Temperature-dependent Conduction Mechanisms in Au/0.8nm-GaN/n-GaAs Schottky Diode

Abstract: Passivation of interface states in the Schottky barrier is an approach to enhance the properties of the Schottky devices. In this work, Au/0.8nm-GaN/n-GaAs Schottky structure is studied electrically in a wide temperature range. With increasing temperature, the reverse current Iinv increases from 1×10-7 A to 1×10-5 A, and the saturation current Is increases from 1×10-32 A to 5×10-7A. The series resistance Rs decreases with increasing temperature from 13.44 Ω to 4.25 Ω. The ideality factor n decreases from 10.64… Show more

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