Study of the 2.4 and 2.6 eV absorption bands in CdMnTe

Lascaray, J. P.; Diouri, J.; Amrani, M.; Coquillat, Dominique

doi:10.1016/0038-1098(83)90639-7

Cited by 31 publications

(18 citation statements)

References 13 publications

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“…Contrary to expectation based on parity rule and spin conservation, optical transitions between these excited states and the ground state are electric dipole active, as a result of the lack of inversion symmetry of the tetrahedral crystal field and mixing of S = 5/2 and S = 3/2 states by spin-orbit interaction. Although relatively weak, 1 these transitions cannot be ignored in the optical properties of wide gap DMS [11][12][13]. The same mixing is also responsible for spin-lattice relaxation of isolated Mn atoms in II-VI DMS, which will be discussed in Sect.…”

Section: Band Structure Of Ii-vi and Iii-v Dmsmentioning

confidence: 97%

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert

Scalbert

2008

Springer Series in Solid-State Sciences

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Diluted Magnetic Semiconductors (DMS) form a new class of magnetic materials, which fill the gap between ferromagnets and semiconductors [1]. In the early literature these DMS were often named semimagnetic semiconductors, because they are midway between nonmagnetic and magnetic materials. DMS are semiconductor compounds (A 1−x M x B) in which a fraction x of the cations is substituted by magnetic impurities, thereby introducing magnetic properties into the host semiconductor AB. This makes a great difference with semiconducting ferromagnets, i.e., ferromagnetic materials exhibiting semiconductor-like transport properties, which have been known for some time (see a review in [2]). A DMS is expected to retain most of its classical semiconducting properties, and to offer the opportunity of a full integration into heterostructures, including heterostructures with the host material. The great challenge and ultimate goal of the research in this field is to obtain DMS ferromagnetic at room temperature, which can be integrated in semiconductor heterostructures for electronic or optoelectronic applications. This is one of the key issues for the advent of spintronics devices.Among the principal DMS families, II-VI and, to a less extent, III-V based DMS, with Mn as the magnetic impurity, are best understood. For this reason the present chapter will be mainly based on these compounds to introduce the wellestablished basic physics of DMS. More details can be found in review papers such as [3][4][5]. Some issues related to work in progress, generally on novel materials, will be also discussed but only briefly.

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Section: Band Structure Of Ii-vi and Iii-v Dmsmentioning

confidence: 97%

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Cibert

Scalbert

2008

Springer Series in Solid-State Sciences

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“…The FRAs of the CdSe and CdMnTe doped fibers were 18.90 ± 0.20 and 18.23 ± 0.22 degree at the magnetic field of 0.126 T, about 1.8 times larger than that of the reference fiber, 10.31 ± 0.17 degree. This enhancement of the FRA of the both CdSe and CdMnTe doped fibers is due to a Zeeman splitting of atomic energy levels according to the intrinsic g‐factor of excitons in semiconductor QDs under an external magnetic field . But, in the case of the CdMnTe doped fiber, exciton splitting due to sp‐d exchange interactions with the Mn 2+ ions was also contributed .…”

Section: Resultsmentioning

confidence: 97%

“…The absorption peaks appearing at 584 and 627 nm are related to the absorptions at 475 and 580 nm of the CdSe QDs in toluene as shown in the inset of Figure . In the case of the CdMnTe doped fiber preform, the absorption band due to CdMnTe QDs was found to appear at 280 (AC: 0.0049 cm −1 ) and 530 nm (AC: 0.0005 cm −1 ), attributed to transitions between the 3d 5 levels of Mn 2+ split by crystal field . The absorption band due to CdMnTe nanoparticles is known to be also related to the concentration of Mn, pH, and reaction time .…”

Section: Resultsmentioning

confidence: 98%

“…This enhancement of the FRA of the both CdSe and CdMnTe doped fibers is due to a Zeeman splitting of atomic energy levels according to the intrinsic g‐factor of excitons in semiconductor QDs under an external magnetic field . But, in the case of the CdMnTe doped fiber, exciton splitting due to sp‐d exchange interactions with the Mn 2+ ions was also contributed . In addition, the size of nanoparticles and the interatomic lattice spacing also affect exciton confinement such as the exchange interaction of electrons and holes, which mixes different electron and hole spin states, causing modifications in the magnetic sensitivity .…”

Section: Resultsmentioning

confidence: 99%

“…The large Faraday rotation under magnetic field of the optical fiber doped with CdSe QDs is understood from the information on the nature of electronic transitions at the band edge, and on effective masses and g‐factors . In the case of the optical fiber doped with CdMnTe QDs, on the other hand, the observed giant Faraday rotation comes from the Mn 2+ ion magnetization, originated from the strong sp‐d exchange interactions that exist between carrier spins and the local 3d spins of embedded paramagnetic Mn dopant atoms . Also, the paramagnetic moment induced by the applied field is linear in the field strength and thus it is a good candidate for all optical fiber isolator and current sensor applications.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Temperature Dependence of Faraday Rotation of Glass Optical Fibers Doped with Quantum Dots of CdSe and CdMnTe

Lee

Ryu

et al. 2019

Physica Status Solidi (a)

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Specialty optical fibers incorporated with CdSe and CdMnTe quantum dots are fabricated using the modified chemical vapor deposition and high temperature fiber drawing process. Temperature dependence of Faraday rotation angle (FRA) is investigated under magnetic field of 0.126 Tesla (T) upon temperature change from 25 to 120 °C. The FRAs of the CdSe and CdMnTe doped fibers are found to increase linearly with magnetic field and no appreciable change in the FRA of the CdSe doped fiber with the increase of temperature is found regardless of the magnetic field as compared to the CdMnTe doped fiber. Average temperature dependence of the FRA are 16.40 × 10−4 and −104.90 × 10−4 degree °C−1 at 0.126 T for the CdSe and CdMnTe doped fibers and the resultant Verdet constants are estimated to be 3.75 ± 0.04 and 3.50 ± 0.12 rad T−1 m−1, respectively.

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Surface photovoltage spectroscopy of Cd0.85Mn0.15Te

Kuźmiński

Szaynok

1986

phys. stat. sol. (a)

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Surface photovoltage spectroscopy measurements are performed for Cd0.85.Mn0.15. Te single crystals with surface orientation (110) in the temperature range between 85 and 300 K at a pressure of 10−5 Pa. The linear dependence on temperature of the energy gap and the energy of the levels connected with manganese are stated and the temperature coefficients are determined. The energotic scheme of the surface layer at 85 K is proposed.

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Study of the 2.4 and 2.6 eV absorption bands in CdMnTe

Cited by 31 publications

References 13 publications

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Diluted Magnetic Semiconductors: Basic Physics and Optical Properties

Temperature Dependence of Faraday Rotation of Glass Optical Fibers Doped with Quantum Dots of CdSe and CdMnTe

Surface photovoltage spectroscopy of Cd0.85Mn0.15Te

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