Study of the Acceptor Removal Effect of LGAD

Feng, Yuan; Huang, Xin; Yu, Chenxia; Jia, Xuewei; Li, Shuqi; Li, Mengzhao; Fan, Y.; Liang, Z.; Sun, Weiyi; Wu, Kewei; Zhao, Mei; Costa, J. Barreiro Guimarães da; Xu, Gaobo

doi:10.1109/tns.2022.3221482

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…A study of the acceptor removal effect on IHEP-IMEv2 LGADs produced by the Institute of Microelectronics (Chinese Academy of Sciences) shows 𝑐 𝑛 values in the range of 3.5−6.0 × 10 −16 cm 2 after neutron irradiation [16]. Different production runs of LGADs from HPK give 𝑐 𝑛 values in the range of 3.15−5.2 × 10 −16 cm 2 also after neutron irradiation and, 𝑐 𝑝 values in the range of 6.5−7.0 × 10 −16 cm 2 after irradiation with 70 MeV/c protons [17,18].…”

Section: Experimental Results: Gain Layer Degradationmentioning

confidence: 99%

Gain layer degradation study after neutron and proton irradiations in Low Gain Avalanche Diodes

Currás Rivera,

La Rosa,

Moll

et al. 2023

J. Inst.

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The high-luminosity upgrade of the ATLAS and CMS experiments includes dedicated sub-detectors to perform the time-stamping of minimum ionizing particles (MIPs). These detectors will be exposed up to fluences in the range of 1.5-2.5 × 1015 neq/cm2 at the end of their lifetime and, Low Gain Avalanche Diode (LGAD) has been chosen as their baseline detection technology. To better understand the performance of LGAD detectors in these environments, a gain layer degradation study after neutron and proton irradiations up to a fluence of 1.5 × 1015 neq/cm2 was performed. LGADs manufactured at Hamamatsu Photonics (HPK) and Centro Nacional de Microelectrónica (CNM-IMB) were chosen for this study and, a comparison in the gain layer degradation after exposure to reactor neutrons at the Jožef Stefan Institute (JSI) in Ljubjana and 24 GeV/c protons at the CERN-PS is presented here.

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Section: Experimental Results: Gain Layer Degradationmentioning

confidence: 99%