Study of the Annealing Effect on the γ-Phase Aluminum Oxide Films Prepared by the High-Vacuum MOCVD System

Abstract

γ-phase aluminum oxide (γ-Al2O3) films are grown on MgO (100) wafers by metal organic chemical vapor deposition (MOCVD). Post-annealing process is conducted to study the influence of annealing temperature on the properties of the films. Structural analyses indicate that all the deposited and annealed films present a preferred growth orientation of γ-Al2O3 (220) along the MgO (200) direction. And the film annealed at 1100 °C exhibits the best film quality compared with those of the films grown and annealed at other temperatures. Scanning electron microscopy measurements also imply the best surface morphology for the γ-Al2O3 film annealed at 1100 °C, which is in good accordance with the structural analyses. Optical transmittance spectra show good transparency for all the deposited and annealed films in the visible wavelength region with an average transmittance value of 83.5%. The optical bandgaps are estimated to be in the range of 5.56–5.79 eV for the deposited and annealed films. Semiconductor films with high optical transmittance in the visible region as well as wide bandgaps are appropriate for the manufacture of transparent optoelectronic devices and ultraviolet optoelectronic devices.

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“…Due to its wear and corrosion resistance, high band gap and beneficial refractive index, aluminium oxide (Al2O3) is a popular coating, widely used in a variety of applications in, for instance, protective coatings, microelectronics, and optical devices. In particular, Al2O3 can act as a passivating layer, as an alternative gate dielectric oxide, 1,2 anti-corrosion and permeation barrier coating, [3][4][5][6] as well as surface enhancement coating in the cutting tool industry. 7,8 Thanks to high growth rates and comprehensive surface coverage, Al2O3 layers are frequently synthesized by metal-organic chemical vapour deposition (MOCVD), a widely used technique for the preparation of functional coatings.…”

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“…[21] Likewise, annealing temperature matters for the grain size and uniformity of MOCVD-produced aluminum oxide thin films; higher annealing temperature corresponds to larger grain size but slightly lower bandgap. [22] Nickel-doped zinc oxide thin films produced by MOCVD have better crystal quality at lower pressures and lower temperatures; lower temperature and pressure also corresponds to larger amounts of nickel incorporated into the doped crystal and a stronger photoluminescence peak at a slightly smaller bandgap. [23] Nanostructured oxide layers, such as zinc oxide nanowires, can be affected by MOCVD process conditions --higher oxygen partial pressure leads to larger-diameter nanowires.…”