Study of the Contact Resistance of Electroless Ni‐B Doped Silicon Using Sodium Borohydride as Reducing Agent

Singh, Balraj; Chatterjee, Anuradha; Daw, A. N.; Mitra, R.N.

doi:10.1149/1.2096744

Cited by 6 publications

(4 citation statements)

References 3 publications

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“…J. T. Liu reported a bath containing NaBH 4 as the reducing agent for making ohmic contact to p-type silicon, but not many details are available [25]. Singh et al [26] used Liu's solution and varied the pH and temperature (only two different temperatures) to study the deposition. However, there was no mention of the thickness of the deposited films, nor the exact amount of borohydride solution required for the plating bath.…”

Section: Introductionsupporting

confidence: 69%

Growth of Ni–B films on n‐silicon

Mondal

Nath

Mondal

et al. 2005

Physica Status Solidi (a)

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Electroless deposition of Ni–B films on n‐silicon has been developed, using sodium borohydride as the reducing agent. The deposition has been studied by varying the temperature, time of deposition and the concentration of the reducing agent used, keeping the pH of the solution unchanged. Sheet resistance of the deposited films were measured to confirm the growth. Preliminary studies on contact resistance between Ni–B film and n‐Si have been carried out. Results are found to be similar to contact resistance between Ni–B and p‐silicon, suggesting that ohmic contacts to n‐Si can be achieved even with Ni–B. This has been done with a view to deposit Ni simultaneously on both the front and back sides of a silicon solar cell, from the same solution. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionsupporting

confidence: 69%

Growth of Ni–B films on n‐silicon

Mondal

Nath

Mondal

et al. 2005

Physica Status Solidi (a)

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“…Most authors of reports on electroless Ni-B deposition have focused on physical properties involving hardness, solderability, and electrical conductivity (El-Mallah and Abbas, 1989; Gorbunova et al, 1973; Singh et al, 1989; Tanabe and Watanabe, 1972). These few papers were concerned with the mechanism of the heterogeneous reaction in an electroless Ni-B bath, but no paper was concerned with the mechanisms of the homogeneous reaction.…”

Section: Introductionmentioning

confidence: 99%

Decomposition of sodium borohydride in an electroless nickel bath

Lo¹,

Hwang²

1994

Ind. Eng. Chem. Res.

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“…To date, such films have mainly been deposited by electroless plating methods, 1-11 and their applications have also been studied. [12][13][14][15][16][17][18] However, very few studies have been undertaken on Ni-B alloy films produced by electroplating methods.…”

mentioning

confidence: 99%

“…To date, such films have mainly been deposited by electroless plating methods, [1][2][3][4][5][6][7][8][9][10][11] and their applications have also been studied. [12][13][14][15][16][17][18] However, very few studies have been undertaken on Ni-B alloy films produced by electroplating methods. [19][20][21] Most reports discuss alloy films with a boron content of under 25 atom %, which have the stable phases of Ni and Ni 3 B according to the Ni-B binary phase diagram.…”

mentioning

confidence: 99%

Boron Particle Composite Plating with Ni–B Alloy Matrix

Arai

Kasai

Shohji

2010

J. Electrochem. Soc.

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Ni-B alloy films containing amorphous boron particles ͑referred to as "Ni-B alloy composite films"͒ were fabricated by electrodeposition and were subsequently subjected to heat-treatment. Their compositions and microstructures were characterized, and their hardness was evaluated. The content of boron particles in the alloy composite films increased with boron particle concentration in the plating baths. In addition, the total boron content in the films increased with decreasing current density, reaching a maximum value of 34.3 atom %. The boron particles were homogeneously distributed in these alloy composite films and exhibited no cohesion. Heat-treatment of the alloy composite films consisting of a Ni-B alloy matrix and the boron particles led to a phase conversion from an inhomogeneous amorphous phase to stable homogeneous crystalline phases, which were similar to those in the Ni-B binary alloy phase diagram. The hardness of the Ni-B alloy 34.3 atom % B composite film was higher than that of a Ni-B alloy film both before and after heat-treatment. Ni-B alloy films are attractive for industrial applications because they possess several desirable properties, including high hardness and wear resistance. To date, such films have mainly been deposited by electroless plating methods, 1-11 and their applications have also been studied. [12][13][14][15][16][17][18] However, very few studies have been undertaken on Ni-B alloy films produced by electroplating methods.19-21 Most reports discuss alloy films with a boron content of under 25 atom %, which have the stable phases of Ni and Ni 3 B according to the Ni-B binary phase diagram. However, the phase diagram also indicates that Ni 2 B and other crystalline phases are stable when the boron content of Ni-B alloys exceeds 25 atom %. A comparison of the microstructure and characteristics of Ni-B alloy films having boron contents above and below 25 atom % is interesting from both an academic and a practical viewpoint. We initially attempted to fabricate Ni-B alloy films using a conventional electroplating method. However, the maximum boron content that could be achieved by this method was less than 25 atom %. We have already reported that Ni-P alloy films containing over 25 atom % phosphorus could be obtained using a unique technique, which involves the formation of a composite film of a Ni-P alloy and phosphorus particles and a subsequent heat-treatment. 22In the present study, to fabricate Ni-B alloy films with boron contents greater than 25 atom %, we used a similar technique, producing composite films of a Ni-B alloy and boron particles and then subjecting them to heat-treatments. Furthermore, we analyzed the microstructure and hardness of the alloy composite films both before and after heat-treatment. Experimental

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Study of the Contact Resistance of Electroless Ni‐B Doped Silicon Using Sodium Borohydride as Reducing Agent

Cited by 6 publications

References 3 publications

Growth of Ni–B films on n‐silicon

Growth of Ni–B films on n‐silicon

Decomposition of sodium borohydride in an electroless nickel bath

Boron Particle Composite Plating with Ni–B Alloy Matrix

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