Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

Westra, J.M.; Swaaij, R.A.C.M.M. van; Šutta, P.; Sharma, K.K.; Creatore, M.; Zeman, Miro

doi:10.1016/j.tsf.2014.07.040

Thin Solid Films

2014

DOI: 10.1016/j.tsf.2014.07.040

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Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

J.M. Westra

R.A.C.M.M. van Swaaij

P. Šutta

et al.

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Cited by 6 publications

References 33 publications

(43 reference statements)

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Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar‐to‐Chemicals Conversion

Zhang

Shi

et al. 2017

ChemSusChem

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Photoelectrochemical (PEC) technology for the conversion of solar energy into chemicals requires cost-effective photoelectrodes to efficiently and stably drive anodic and/or cathodic half-reactions to complete the overall reactions for storing solar energy in chemical bonds. The shared properties among semiconducting photoelectrodes and photovoltaic (PV) materials are light absorption, charge separation, and charge transfer. Earth-abundant silicon materials have been widely applied in the PV industry, and have demonstrated their efficiency as alternative photoabsorbers for photoelectrodes. Many efforts have been made to fabricate silicon photoelectrodes with enhanced performance, and significant progress has been achieved in recent years. Herein, recent developments in crystalline and thin-film silicon-based photoelectrodes (including amorphous, microcrystalline, and nanocrystalline silicon) immersed in aqueous solution for PEC hydrogen production from water splitting are summarized, as well as applications in PEC CO reduction and PEC regeneration of discharged species in redox flow batteries. Silicon is an ideal material for the cost-effective production of solar chemicals through PEC methods.

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Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar‐to‐Chemicals Conversion

Zhang

Shi

et al. 2017

ChemSusChem

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Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells

Kanneboina

Madaka

Agarwal

2021

J Mater Sci: Mater Electron

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Spectroscopic ellipsometry investigation to study the microstructure evolution in boron-doped amorphous silicon films as a result of hydrogen dilution

Kanneboina

Agarwal

2021

SN Appl. Sci.

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Spectroscopic ellipsometry (SE) is a sophisticated technique to find the optical constants, bandgap and microstructure of thin layer. SE is used to study the microstructure evolution in boron-doped amorphous silicon films for different hydrogen flow rates (HFR). Spectral dependance of the real and imaginary parts of pseudo-dielectric constant is obtained at a fix angle of incidence (70°). Tauc–Lorentz (T–L) optical model is used to estimate the thickness, bandgap, optical constant and thickness of the top rough layer of the films, whereas Bruggeman effective medium approximation (BEMA) is applied to find the volume fractions of amorphous, crystalline and void phases. A shift in peak position from 3.65 to 4.1 eV in dielectric constant is observed as the hydrogen flow rate is increased from 30 to 70 SCCM. This is accompanied by the emergence of a peak near 3.4 eV, which belongs to the direct bandgap of c-Si. These observations suggest an improvement in microstructure of the films deposited at higher HFR. It is also supported by the observation that films deposited at higher HFR have higher magnitude of amplitude parameter and less broadening. Fitting of experimental data using BEMA also suggests that crystalline fraction increases and amorphous fraction decreases at higher HFR. The bandgap and thickness of top rough layer estimated from SE data are matched well with those obtained using transmission data and atomic force microscopy.

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Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

Cited by 6 publications

References 33 publications

Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar‐to‐Chemicals Conversion

Recent Advances in Photoelectrochemical Applications of Silicon Materials for Solar‐to‐Chemicals Conversion

Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells

Spectroscopic ellipsometry investigation to study the microstructure evolution in boron-doped amorphous silicon films as a result of hydrogen dilution

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