Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors

Abstract

The effect of buffer layer quality on dc characteristics of AlGaN/GaN high electron mobility (HEMTs) was studied. AlGaN/GaN HEMT structures with 2 and 5 μm GaN buffer layers on sapphire substrates from two different vendors with the same Al concentration of AlGaN were used. The defect densities of HEMT structures with 2 and 5 μm GaN buffer layer were 7 × 109 and 5 × 108 cm−2, respectively, as measured by transmission electron microscopy. There was little difference in drain saturation current or in transfer characteristics in HEMTs on these two types of buffer. However, there was no dispersion observed on the nonpassivated HEMTs with 5 μm GaN buffer layer for gate-lag pulsed measurement at 100 kHz, which was in sharp contrast to the 71% drain current reduction for the HEMT with 2 μm GaN buffer layer.

An effective solution to optimize the saddle-shape warpage in 3D IC applications by patterning laser treatment

“…As shown in figure 1(a), the Y direction is along the wafer notch direction and X direction is perpendicular to Y at the center of the wafer mapping. Different from the isotropic warpage of 2D stress issues as shown in figures 1(c) and (d), the characteristic of the saddle-shape warpage issue is anisotropy, which means that stresses in the X and Y directions of the wafer are unequal, as shown in figure 1(b) [9]. Traditional methods have difficulty overcoming this new stress issue, which will affect wafer transfer from the equipment.…”