There has been a growing interest in the synthesis and characterization of amorphous chalcogenide glasses due to their importance in preparing electronic memories, grating, switching devices and their optical applications as good IR transmitting materials. The study of the glass transformations and crystallization processes in the amorphous systems is interesting not only from the fundamental aspect of establishing the reaction mechanism of crystal nucleation and growth, but also from a technological point of view. The present research work is concentrated on the study of glass transition and crystallization behavior in Ga15Se85−xPbx with x = 0, 3, and 6 chalcogenide glasses by dierential scanning calorimetry. Their amorphous nature has been veried by X-ray diraction. The dierential scanning calorimetry experiments were performed at dierent continuous heating rates (5 to 25 K/min). The glass transition temperature (Tg) and crystallization temperature (Tc) of these glasses has been determined from dierential scanning calorimetry thermograms. The dependence of Tg and Tc on the heating rate (β) has been used for the determination of dierent crystallization parameters such as the activation energy of crystallization (∆Ec), the activation energy for structural relaxation (∆Et) and the order parameter (n). The results of crystallization were discussed on the basis of dierent models such as Kissinger's approach and modication for non-isothermal crystallization in addition to Johnson, Mehl, Ozawa and Avrami.