Study of the Heverse Characteristics of Tunnel Diodes Prepared from Sb Doped Ge, in the Eegion of Indirect Tunnel Current

Midvichi, I.

doi:10.1515/9783112497067-035

November 1 1964

DOI: 10.1515/9783112497067-035

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Study of the Heverse Characteristics of Tunnel Diodes Prepared from Sb Doped Ge, in the Eegion of Indirect Tunnel Current

I. Midvichi¹

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Study of the Heverse Characteristics of Tunnel Diodes Prepared from Sb Doped Ge, in the Eegion of Indirect Tunnel Current

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