2016
DOI: 10.1149/2.0301610jss
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Study of the Impact of H+Mobile Ions on RF Performances of PECVD TEOS Silicon Dioxide Deposited at Low Temperature

Abstract: In this paper, we study the impact of H+ mobile ions on Radio Frequency (RF) performances of silicon dioxide deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at low temperature (200°C), using a tetraethylorthosilicate (TEOS) - oxygen mixture as gas precursor. The presence of H+ ions within the dielectric is related to the low temperature deposition of the dielectric combined with exposition to moisture; the phenomenon is proven with Fourier Transform Infrared Spectroscopy (FTIR) and electrical me… Show more

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