Study of the influence of gamma irradiation on internal friction in dislocation silicon

Ashrapov, Ulugbek Tovfikovich; Makhkamov, Sherbay Makhamovich; Sadikov, Ilkham Ismailovich; Tashmetov, Mannab Yusupovich; Erdonov, Muzaffar Nazarovich

doi:10.1016/j.apradiso.2022.110623

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…To further verify this trend, we have subjected gamma irradiated Si samples to ultra-fast laser ablation. It is well-known that the gamma irradiation can deteriorate both the electrical and thermal conductivity of materials by introducing point defects [76,77]. Specifically, Sonder and Templeton [78] reported that gamma irradiation of p-type Si generates donor levels within the lower portion of the forbidden energy gap.…”

Section: Laser Ablation Of Gamma Irradiated Siliconmentioning

confidence: 99%

New aspects of femtosecond laser ablation of Si in water: a material perspective

Kumar,

Banerjee,

Akkanaboina

et al. 2024

J. Phys.: Condens. Matter

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We report a study of the role of material’s conductivity in determining the morphology of nanoparticles and nanostructures produced by ultrafast laser ablation of solids. Nanoparticles and textured surfaces formed by laser ablation display a wide variation in size and morphology depending on the material. In general, these qualities can be grouped as to material type, insulator, semiconductor, or metal; although each has many other different material properties that make it difficult to identify the critical material factor. In this report, we study these nanoparticle/ surface structural characteristics as a function of silicon (Si) resistivity, thus honing-in on this critical parameter and its effects. The results show variations in morphology, optical and non-linear properties of Si nanoparticles. The yield of colloidal Si nanoparticles increased with an increase in the conductivity of Si. Laser-induced periodic surface structures (LIPSS) formed on ablated substrates are also found to be sensitive to the initial conductivity of the material. Further, the laser ablation of Gamma-irradiated Si has been investigated to verify the influence of altered conductivity on the formation of Si nanoparticles. These observations are interpreted using the basic mechanisms of the laser ablation process in a liquid and its intricate relation with the initial density of states and thermal conductivities of the target material.

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Section: Laser Ablation Of Gamma Irradiated Siliconmentioning

confidence: 99%

New aspects of femtosecond laser ablation of Si in water: a material perspective

Kumar,

Banerjee,

Akkanaboina

et al. 2024

J. Phys.: Condens. Matter

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“…As a result of the gamma irradiation of Si, the resulting change in internal friction (IF) Q −1 is associated with the process of vacancy V relaxation with the formation of vacancy defect complexes V-V-V near dislocation lines L D but with a large measurement error of IF 1 Defect annealing leads to changes in the shape of IF temperature spectrum Q −1 (T). 2,3 IF method allows the spectrum of structural defects to be set in the analysis of the positions of IF maximum, duration of relaxation time τ, and their contribution to the attenuation of elastic vibrations.…”

mentioning

confidence: 99%

Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

Onanko,

Kuzmych,

Onanko

et al. 2024

ECS J. Solid State Sci. Technol.

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In this work, after electron irradiation and X-ray, the outcomes of the evaluation dynamic characteristics of interstitial atoms Sij , vacancy V, and O-complexes were evaluated to account for the annealing conditions to derive specific structural defects in the SiO2/Si wafer. A non-destructive method, which allows the determination of the internal friction difference ΔQ-1/Q-1 0 of the elastic vibration of structural defects of dislocations with density ND and the depth of the broken layer hb , is offered for the SiO2/Si wafer. The method was developed, the installation was designed and manufactured for the excitation and registration of damped bending resonant oscillations in a SiO2/Si disc-shaped wafer with a thickness hSiO2 ≈ 100 nm, his = 300÷500×103 nm, and diameter D = 60÷100×10-3 m to measure the structurally sensitive internal friction Q-1 in vacuum P ≈ 10-2 Pa. Measurement of the internal friction background Q-1 0 at harmonic frequencies f0 and f2 allowed us to experimentally determine the nodal lines of the oscillating disks.

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Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation

Goodman,

Aga,

Aga

et al. 2024

IEEE Trans. Device Mater. Relib.

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Study of the influence of gamma irradiation on internal friction in dislocation silicon

Cited by 3 publications

References 3 publications

New aspects of femtosecond laser ablation of Si in water: a material perspective

New aspects of femtosecond laser ablation of Si in water: a material perspective

Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers

Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation

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Study of the influence of gamma irradiation on internal friction in dislocation silicon

Cited by 3 publications

References 3 publications

New aspects of femtosecond laser ablation of Si in water: a material perspective

New aspects of femtosecond laser ablation of Si in water: a material perspective

Anelastic Internal Friction and Mechanical Spectroscopy of SiO2/Si Wafers

Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation

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Product

Resources

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Anelastic Internal Friction and Mechanical Spectroscopy of SiO₂/Si Wafers