Study of the influence of α‐particles irradiation on AlGaAs/GaAs heterojunction structures

Abstract

Aim of the present work is to study the influence of the radiation of α‐particles (5 MeV) in Schottky diodes on CaAs/AlGaAs/GaAs heterojunction structures. The investigation was performed by means of current‐voltage and capacitance‐voltage characteristics in 300 K temperature. The dependence of ideality factor, barrier height, carrier concentration and series resistance as a function of radiation fluence was determined. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)