Study of the initial adsorption of nitrogen on SiC(100)-(2 × 1)

Bermudez, V. M.

doi:10.1016/0039-6028(92)90695-3

Cited by 9 publications

(2 citation statements)

References 33 publications

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“…We find that a 1 ML coverage is unfavored if N atoms sit in zincblende adsorption sites, while it is favored for a nitrogen wet surface. Experimentally [43,44] full nitridization of the Si-SiC(OO1) surface was not observed for coverages higher than 0.6-0.7 ML, when operating at high temperature (T-800-1000 C). This may indicate that under these conditions zincblende sites become stable and that nitrogen wetting of the surface can be achieved only at low temperature.…”

Section: Fig 4 Nitrogen Adsorption Sites On the ~(2x1) Reconstructementioning

confidence: 93%

THEORETICAL STUDY OF Si and N ADSORPTION ON THE Si-TERMINATED SiC(001) SURFACE

Pizzagalli

Catellani²,

Galli

et al. 1999

Surf. Rev. Lett.

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We report the results of first principles molecular dynamics simulations of the adsorption of Si and N atoms on a Si-terminated p(2×1) SiC(001) surface. In particular, we discuss different structural models for the Si-rich (3×2) surface, and the adsorption of 1/8, 1/2 and 1 monolayer nitrogen on the p(2×1) surface. Our simulations show that a SiC(001)-p(2×1) surface covered by a nitrogen monolayer is an inert substrate which inhibits growth.

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Section: Fig 4 Nitrogen Adsorption Sites On the ~(2x1) Reconstructementioning

confidence: 93%

THEORETICAL STUDY OF Si and N ADSORPTION ON THE Si-TERMINATED SiC(001) SURFACE

Pizzagalli

Catellani²,

Galli

et al. 1999

Surf. Rev. Lett.

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“…Scanning tunnelling microscopy (STM) has provided striking images of the various surface reconstructions that form under different thermal and adsorption treatments [15][16][17]. These studies have also identified several UHV procedures for obtaining clean, ordered surfaces, including annealing in a Si flux [18], high-temperature (1150 • C) annealing followed by subsequent Si deposition [19], flashing to 1250 • C [20], Si molecular beam etching at 900-1000 • C [21], and annealing under ethylene exposure [22]. These surface electronic and chemical analysis techniques have typical sensitivities at the 10 13 cm −2 , i.e., 1% surface concentration, level.…”

Section: Electronic States At and Near Sic Free Surfacesmentioning

confidence: 99%

Electron-excited luminescence of SiC surfaces and interfaces

Brillson

Tumakha

Okojie

et al. 2004

J. Phys.: Condens. Matter

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Recent advances in probing the electronic structure of SiC with electron-excited luminescence techniques reveal the presence of localized electronic states near its surfaces and interfaces. These localized states form not only as a result of interface chemical bonding but also due to the formation of new lattice polytypes. Such electronic features are sensitive to the conditions under which the SiC is processed, as well as the application of electrical or mechanical stress. These localized changes on a nanometre scale provide a new perspective to Schottky barrier formation, band alignment, and polytypism in SiC as well as its performance in electronic devices.

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