Abstract:Field ion microscope (FIM) is an instrument used to analyze the structure of specimen surface at an atomic scale. In recent years, a position-sensitive detector (PSD) has been used as a detector in FIM. By using the PSD, much information can be obtained, such as the number of released ion from each position. In this work, we studied the ionization in FIM measurement using pulsed laser. In the FIM measurement using the pulsed laser, ions with specific time structure relative to the laser pulse were detected, an… Show more
“…Timeof-flight FIM was performed on the same instrument, with high-voltage pulses and a pulse fraction of 20%. A similar approach with laser pulses was recently discussed in [23].…”
Directly imaging all atoms constituting a material and, maybe more importantly, crystalline defects that dictate materials' properties, remains a formidable challenge. Here, we propose a new approach to chemistry-sensitive field-ion microscopy (FIM) combining FIM with time-of-flight mass-spectrometry (tof-ms). Elemental identification and correlation to FIM images enabled by data mining of combined tof-ms delivers a truly analytical-FIM (A-FIM). Contrast variations due to different chemistries is also interpreted from density-functional theory (DFT). A-FIM has true atomic resolution and we demonstrate how the technique can reveal the presence of individual solute atoms at specific positions in the microstructure. The performance of this new technique is showcased in revealing individual Re atoms at crystalline defects formed in Ni-Re binary alloy during creep deformation. The atomistic details offered by A-FIM allowed us to directly compare our results with simulations, and to tackle a long-standing question of how Re extends lifetime of Ni-based superalloys in service at high-temperature.
“…Timeof-flight FIM was performed on the same instrument, with high-voltage pulses and a pulse fraction of 20%. A similar approach with laser pulses was recently discussed in [23].…”
Directly imaging all atoms constituting a material and, maybe more importantly, crystalline defects that dictate materials' properties, remains a formidable challenge. Here, we propose a new approach to chemistry-sensitive field-ion microscopy (FIM) combining FIM with time-of-flight mass-spectrometry (tof-ms). Elemental identification and correlation to FIM images enabled by data mining of combined tof-ms delivers a truly analytical-FIM (A-FIM). Contrast variations due to different chemistries is also interpreted from density-functional theory (DFT). A-FIM has true atomic resolution and we demonstrate how the technique can reveal the presence of individual solute atoms at specific positions in the microstructure. The performance of this new technique is showcased in revealing individual Re atoms at crystalline defects formed in Ni-Re binary alloy during creep deformation. The atomistic details offered by A-FIM allowed us to directly compare our results with simulations, and to tackle a long-standing question of how Re extends lifetime of Ni-based superalloys in service at high-temperature.
“…High-voltage pulsed FIM has long been reported to enable controlled field evaporation of the specimen's surface atoms during FIM imaging (Seidman, 1978; Kellogg & Tsong, 1980). Laser-pulsed FIM experiments were also previously discussed in terms of the individual space-time coordinate of individual field-ionized detection events (Vurpillot et al, 2009; Silaeva et al, 2014; Kim & Owari, 2018). Fig.…”
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