Study of the light-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters

Emelyanov, V. M.; Абрамов, А.; Bobyl, A. V.; Gudovskikh, A. S.; Orekhov, D.; Теруков, Е. И.; Timoshina, N. Kh.; Chosta, O.I.; Shvarts, М. Z.

doi:10.1134/s1063782613050102

Cited by 7 publications

(5 citation statements)

References 24 publications

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“…It is important to emphasize that both the calcu lated and experimentally achieved short circuit cur rent density in a Si:H are below 20 mA/cm 2 [5], while the aforementioned growth in V OC,a with increasing E g, a is accompanied by a decrease in J SC,a that levels the positive effect. Therefore, it is only possible to…”

Section: Analysis Of the Possibility Of High Efficiency Photovoltaic mentioning

confidence: 92%

“…A small lifetime of charge carriers in a Si:H (~10 -9 s [5]) leads to a decrease in both the open circuit volt age and short circuit current. However, strong com pensation of this material leads to a more pronounced decrease in V OC,a .…”

mentioning

confidence: 99%

“…This approach allowed The other parameters of a Si:H layer had the same val ues as in [5,6]. If the short circuit current density is set equal to the value obtained in the complete model [6], the calculated open circuit voltage turns out to be V OC,a = 0.775 V. By combining the simplified and complete models of a Si:H, it is possible to trace the influence of the degree of material compensation on the open circuit voltage.…”

mentioning

confidence: 99%

“…Open circuit voltage V OC,a in the first component of tandem HIT solar cell as a function of the compensating acceptor concentration in the n base region for N A,p = 10 19 cm -3 , N D,n = 3 × 10 17 cm -3 , and τ SR,cell of unit area (with allowance for serial resistance R s ) is then(5) where P = 0.1 W/cm 2 is the incident solar radiation power for the AM1.5G regime.The value of V OC,s = 0.75 V was calculated[1] for the following parameters: p 0,s = 9 × 10 15 cm -3 , τ SR,s = 8.8 × 10 -4 s, d s = 100 μm, S s = 2 cm/s, and J SC,s = 39.5 mA/cm 2 . At J SC,s = 20 mA/cm 2 the calculated open circuit voltage decreases to V OC,s = 0.73 V, while at S s increase to 60 cm/s it drops to V OC,s = 0.68 V.…”

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confidence: 99%

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Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

et al. 2015

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The possibility of creating tandem heterojunction with intrinsic thin layer (HIT) solar cells pos sessing photovoltaic conversion efficiency greater than that of the best existing single junction HIT structures is analyzed. It is established that, because of small carrier lifetimes and high degrees of compensation, the use of amorphous silicon in tandem HIT cells cannot provide for record high conversion efficiency. Key param eters of the material for a widegap p-n junction on the frontal side of tandem solar cells are determined that will allow a photovoltaic conversion efficiency above 25% under AM1.5 conditions to be reached.

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Section: Analysis Of the Possibility Of High Efficiency Photovoltaic mentioning

confidence: 92%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

et al. 2015

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“…As the spacer growth rate and thickness changes, it is reasonable to assume that the properties of all the layers except for the i-region remain undisturbed. The only parameter of the i-region which can affect the QE (and, therefore, J SC ), is the carrier lifetime (τ) [10,11]. Therefore, the observed modification of J SC can be attributed to the reduction or enhancement of τ.…”

Section: Open-circuit Voltage and Short-circuit Current Of Singlejunc...mentioning

confidence: 99%

InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

Mintairov¹,

Kalyuzhnyy²,

Maximov³

et al. 2016

Semicond. Sci. Technol.

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MOCVD-grown GaAs single-junction solar cells (SC) with quantum well-dots (QWD) were fabricated and tested. The QWD were formed by the deposition of In 0.4 Ga 0.6 As layers separated with GaAs spacers. A remarkable improvement of photocurrent was achieved and the reduction of open-circuit voltage was partly suppressed by decreasing the spacers' growth rate as well as increasing their thickness up to 40 nm. Based on the experimentally obtained characteristics of these single-junction SCs we estimated that using QWD media in the middle (GaAs-based) subcell can provide 1 abs. %, increasing the efficiency of the triple-junction GaInP/GaAs/ Ge SCs.

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Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics

et al. 2013

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Study of the light-induced degradation of tandem α-Si:H/μc-Si:H photovoltaic converters

Cited by 7 publications

References 24 publications

Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

InGaAs quantum well-dots based GaAs subcell with enhanced photocurrent for multijunction GaInP/GaAs/Ge solar cells

Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics

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