2003
DOI: 10.1016/s0026-2692(03)00062-4
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Study of the misfit dislocations in semiconductor heterostructures by density functional TB molecular dynamics and path probability methods

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Cited by 7 publications
(1 citation statement)
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“…However, both of them are limited in their predictive capabilities in thin film epitaxy, since no method exists at present to investigate the spatial distribution of misfit dislocations and the use of theoretical bulk values of elastic moduli. Atomic simulation overcomes such limitations and can be used for direct observations and quantitative predictions of the atomic structure of misfit dislocation [17][18][19][20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…However, both of them are limited in their predictive capabilities in thin film epitaxy, since no method exists at present to investigate the spatial distribution of misfit dislocations and the use of theoretical bulk values of elastic moduli. Atomic simulation overcomes such limitations and can be used for direct observations and quantitative predictions of the atomic structure of misfit dislocation [17][18][19][20][21][22].…”
Section: Introductionmentioning
confidence: 99%