Study of the Multiwavelength DFB Semiconductor Laser Array Based on the Reconstruction-Equivalent-Chirp Technique

Shi, Yuechun; Li, Simin; Li, Lianyan; Guo, Ruixiang; Zhang, Tingting; Liu, Rui; Li, Weichun; Lu, Linlin; Song, Tao; Zhou, Yating; Li, Jingsi; Chen, Xiangfei

doi:10.1109/jlt.2013.2280715

Cited by 67 publications

(34 citation statements)

References 18 publications

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“…However the thermal effect is not included. But it does not affect the wavelength precision because it is well known that the wavelength shift ratio of each laser is nearly the same when the same material is used and the value is about 0.09 nm= C for InP-based materials [16], [17].The main parameters are listed in the Table 1. Since the length is increased by bent structure, in order to keep the whole virtual optical cavity length to 400 m, the bent waveguide along horizontal direction should be shorter than the straight waveguide.…”

Section: Simulation Resultsmentioning

confidence: 99%

A Low-Cost and High-Wavelength-Precision Fabrication Method for Multiwavelength DFB Semiconductor Laser Array

Shi

Liu

et al. 2014

IEEE Photonics J.

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A new method to fabricate the multiwavelength DFB semiconductor laser array (MLA) is proposed for the first time based on sampled grating and s-bent waveguide. According to the detailed precision analysis, the lasing wavelength accuracy of the proposed structure is significantly improved. Because the common holography exposure and micrometer photolithography are used to fabricate the sampled grating and the bent waveguide in this method, the fabrication cost is very low. Therefore, it offers a suitable method for massive fabrication.

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Section: Simulation Resultsmentioning

confidence: 99%

A Low-Cost and High-Wavelength-Precision Fabrication Method for Multiwavelength DFB Semiconductor Laser Array

Shi

Liu

et al. 2014

IEEE Photonics J.

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“…In addition, though the wavelength spacing can be well determined, the initial phase of each grating section can be individually controlled by changing the initial phase of the sampling pattern [33]. So if we can control the initial phases of two adjacent grating sections, the side mode can also be suppressed to some extent.…”

Section: Discussionmentioning

confidence: 99%

Study of cascaded tunable DFB semiconductor laser with wide tuning range and high single mode yield based on equivalent phase shift technique

Song

et al. 2015

Optics Communications

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“…As a result, the sampling period can also be much larger than that for normal lasers based on REC technique, which will relax the fabrication process. Moreover, the wavelength precision can be further improved as well, according to the equation described in [7] and [9], and can be expressed as…”

Section: Threshold Condition Analysismentioning

confidence: 99%

“…In REC technique, the sampling patterns are carefully designed to realize the desired grating profile in some subgratings (usually the þfirst/Àfirst subgrating) equivalently. It has some advantages such as high wavelength precision and low fabrication cost [7], [9], [10]. However, since sampled gratings have multi-channel (subgrating) reflections [11], the zeroth order resonance can lead to undesirable lasing.…”

Section: Introductionmentioning

confidence: 99%

Improved Single-Mode Property of DFB Semiconductor Laser Based on Sampling Technique Using Chirp Compensation

et al. 2015

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A DFB semiconductor laser with a bent waveguide and an equivalent chirp compensation based on the sampled grating technique is proposed to improve the single longitudinal mode (SLM) performance for the first time. In such a structure, the bent waveguide is used to form the basically chirped grating so that the zeroth-order resonance is greatly suppressed. However, for the Àfirst-order resonance, the equivalent chirp by designing the sampling pattern is used to compensate the chirp in the Àfirst subgrating caused by bent waveguide. As a result, the Àfirst-order resonance is enhanced, whereas the zeroth resonance is well suppressed. Since the wavelength spacing between the zeroth and Àfirst subgrating can be reduced by adopting this method, the sampling period can be increased. Therefore, the corresponding line in photomask can be enlarged as well to ease the fabrication, and the lasing wavelength accuracy can be further improved according to the theoretical analysis. Because the lasing wavelength can be controlled by changing the sampling period, the performances of the multiwavelength DFB laser array can also be improved using this method.

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Study of the Multiwavelength DFB Semiconductor Laser Array Based on the Reconstruction-Equivalent-Chirp Technique

Cited by 67 publications

References 18 publications

A Low-Cost and High-Wavelength-Precision Fabrication Method for Multiwavelength DFB Semiconductor Laser Array

A Low-Cost and High-Wavelength-Precision Fabrication Method for Multiwavelength DFB Semiconductor Laser Array

Study of cascaded tunable DFB semiconductor laser with wide tuning range and high single mode yield based on equivalent phase shift technique

Improved Single-Mode Property of DFB Semiconductor Laser Based on Sampling Technique Using Chirp Compensation

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