Study of the Preparation and Performance of Mg-Doped Si/Al₂O₃/ZnO Nanowall Heterojunction UV Detector

Abstract

This study presents the fabrication of a Mg-doped Si/Al2O3/ZnO nanowall heterojunction ultraviolet (UV) detector via magnetron sputtering, electron beam evaporation, and a hydrothermal method. The effects of Mg doping on the crystal structure, surface morphology, Raman characteristics, photoluminescence, and UV detection performance of the ZnO nanowall are investigated, demonstrating the high stability of the Si/Al2O3/ZnO nanowall heterojunction UV detector. Notably, when the Mg doping concentration is 2 mol %, the detector exhibits a total current of 0.030 A. When the Mg doping concentration is increased from 0 to 2 mol %, the responsivity increases from 0.165 to 2.001 A/W. Moreover, the sensitivity increases from 11.45 to 76.77, whereas the response time reduces by 80%. These findings demonstrate the promising performance enhancement of UV detectors facilitated by Mg doping, expanding their application scope in the realm of UV detection. The Mg-doped Si/Al2O3/ZnO nanowall heterojunction UV detector demonstrates considerably improved responsiveness and response speed, emphasizing its broad application scope in various fields, such as energy conservation and carbon reduction and information technology.