Study of the Properties of the Porous Silicon Synthesized by Ag Assisted Chemical Etching

Abstract

Abstract. Porous Silicon (PSi) is synthesized by Ag assisted electroless etching and characterized by Scanning electron microscopy (SEM). The effect of etching time on the optical reflectivity, optical absorbance of PSi is investigated. Reflectivity measurements showed gradual decrease in the reflectivity with respect to etching time. 45% reflectivity of bare silicon drops to 10% for 2 hours etching and to 6% for 3 hours etching. The decrease in the reflectivity shows that the PSi can be employed as an anti reflecting substrate in optoelectronic devices. The absorbance measurements revealed that the average absorbance of PSi is 0.60 in the wavelength range 300-800 nm after 2 hours etching. From the photoluminescence spectra it was found that PL intensity of PSi is high compared to bare silicon wafer. Static water contact angle measurements were performed to examine the hydrophobic properties of the PSi prepared under different conditions. The porous silicon surface after etching has been demonstrated to be suitable for self cleaning applications.

Role of Metal Nanoparticles in the Fabrication of Porous Silicon: A Material for Solar Cell Applications

“…We also calculated E g by graphical method. PS is direct band gap material which was verified by its photoluminescence properties reported in our previous study 16 . Thus, a graph is plotted between (αhν) 2 verses graph and is shown in Figure 6.…”

“…Figure 2 (b) shows the plan view image of the porous silicon after etching the AgNP deposited silicon etching in solution HF-H 2 O 2 -H 2 O for 60 min. The method of Ag nanoparticle deposition and the synthesis of PS is discussed explicitly in our previous work 16 . The generation of pores through etching is possible through the reduction of H 2 O 2 at the silver nanoparticles.…”

Механизмы Токопереноса В Полупроводниковой Структуре С Пленкой Пористого Кремния, Сформированной Металл-Стимулированным Травлением

“…Для солнечной энергетики актуально использование пленок por-Si, изготовленных методом металл-стимулированного травления. Указанный метод обеспечивает наиболее низкую отражательную способность поверхности пленки por-Si по сравнению с другими методами (анодного электрохимического травления, химического окрашивающего травления), что способствует повышению эффективности солнечных элементов [1][2][3]. Основой метода металл-стимулированного травления является селективное химическое травление кремния с использованием предварительно осажденных на его поверхность частиц благородных металлов, наиболее часто используют серебро и золото.…”

Current Transfer in a Semiconductor Structure with a Porous Silicon Film formed by Metal-Stimulated Etching

“…For solar energy, the use of por-Si films fabricated by metal-stimulated etching is topical. This method provides the lowest reflectivity of the por-Si film surface compared to other methods (anodic electrochemical etching, chemical coloring etching), which contributes to an increase in solar cells efficiency [1][2][3]. The basis of the metal-stimulated etching method is the selective chemical etching of silicon using noble metal particles preliminarily deposited on its surface; silver and gold are most often used.…”