Study of the Raman peak shift and the linewidth of light-emitting porous silicon

Yang, Min; Huang, Daming; Hao, P. H.; Zhang, Fulong; Hou, Xiaoyuan; Wang, Xun

doi:10.1063/1.355808

Cited by 134 publications

(64 citation statements)

References 7 publications

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“…The origin of this phenomenon is mainly attributed to quantum confinement effects in nanometer size silicon crystallites. [9][10][11][12] Raman-scattering spectroscopy, together with the phonon confinement model, has been demonstrated as a powerful technique to investigate PS structure. [13][14][15] Furthermore, highresolution x-ray techniques have been applied to obtain information about the peculiar structure and strain of porous Si.…”

Section: Introductionmentioning

confidence: 99%

X-ray investigation of nanostructured stain-etched porous silicon

Abramof

Beloto

Ueta

et al. 2006

Journal of Applied Physics

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The structure of porous silicon layers was accurately investigated by diverse x-ray methods. A series of samples with etching times varying from 1 to 10 min was produced by chemical etch using a HF/ HNO 3 -based solution assisted with NaNO 2 . The porosity determined from low-angle x-ray reflectivity spectra was found to fluctuate from 35% to 55% as the etch proceeds. Reciprocal space mapping around the ͑004͒ Si lattice point revealed that the Si crystallites are deformed due to a distribution of in-plane compressive strain caused by the neighboring pores, which leads to an expansion of the perpendicular lattice parameter. No signature of mosaicity was found. The perpendicular strain could be precisely determined by fitting the x-ray-diffraction spectra, measured in the triple-axis configuration, to a set of Voigt and Gaussian distributions. These strain distributions are certainly associated with the different population of crystallite sizes formed during the stain etching process. We were able here to determine the temporal evolution of the strain inside the nanostructured porous silicon.

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Section: Introductionmentioning

confidence: 99%

X-ray investigation of nanostructured stain-etched porous silicon

Abramof

Beloto

Ueta

et al. 2006

Journal of Applied Physics

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“…1b have a noticeable broadening and a small shift toward low frequencies in comparison with the given line of the reference sample. This indicates that the CdS films of the test samples are formed from grains with a smaller average size compared to the reference sample [7].…”

Section: Fig 1 Raman Spectra: A) Typical Raman Spectrum Of the Sampmentioning

confidence: 98%

“…The peak at frequency 521 cm-1 (Fig. 1, a) is the first-order spectral line of Raman for silicon and is determined by the longitudinal optical phonon mode (1LO) [7]. The third-order spectral lines (3LO) for CdS and the second order (2LO) for silicon on each other in the frequency range 900-1000 cm-1 are superimposed (Fig.…”

mentioning

confidence: 97%

Properties of Raman scattering in the CdS films, formed on the monocrystalline surface and porous silicon by the chemical bath deposition method

Tregulov¹

2017

General Question of World Science

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General question of world science 3.Сокращение размеров частицы в направлении движения есть сокращение длины волны фотона.4. Сокращение течения времени при больших скоростях -это сокращение периода колебания фотона в системе «фотон-частица», т.е. увеличения частоты (энергии) фотона, требуемой для увеличения скорости системы «фотон-частица». 10.18411/gq-30-11-2017-02 idsp 000001:gq-30-11-2017-02 Annotation Raman spectra of light in CdS films formed on the surface of single-crystal and porous silicon are investigated. An explanation is offered for the nature of a wide Raman spectral line in the frequency range 220-275 cm-1.

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“…Assuming that both disorder effects and stress are uniform in the scattering volume, the fitting of the spectra with the correlation length model ͑CLM͒ allows one to estimate both the correlation length, L, which is related to the average distance between defects, and the stress value, . [14][15][16][17] Of course, both magnitudes have to be considered as effective average values as in principle some distribution of both L and might be present in the layers. On the basis of the loss of the translational symmetry in highly disordered materials, the CLM assumes a relaxation of the momentum conservation rule.…”

Section: B Raman Spectroscopy Measurementsmentioning

confidence: 99%

Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers

Achiq¹,

Rizk²,

Gourbilleau³

et al. 1998

Journal of Applied Physics

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Nanocrystalline silicon layers have been obtained by thermal annealing of films sputtered in various hydrogen partial pressures. The as-deposited and crystallized films were investigated by infrared, Raman, x-ray diffraction, electron microscopy, and optical absorption techniques. The obtained data show evidence of a close correlation between the microstructure and properties of the processed material, and the hydrogen content in the as-grown deposit. The minimum stress deduced from Raman was found to correspond to the widest band gap and to a maximum hydrogen content in the basic unannealed sample. Such a structure relaxation seems to originate from the so-called ''chemical annealing'' thought to be due to Si-H 2 species, as identified by infrared spectroscopy. The variation of the band gap has been interpreted in terms of the changes in the band tails associated with the disorder which would be induced by stress. Finally, the layers originally deposited with the highest hydrogen pressure show a lowest stress-which does not correlate with the hydrogen content and the optical band gap-and some texturing. These features are likely related to the presence in these layers of a significant crystalline fraction already before annealing.

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Study of the Raman peak shift and the linewidth of light-emitting porous silicon

Cited by 134 publications

References 7 publications

X-ray investigation of nanostructured stain-etched porous silicon

X-ray investigation of nanostructured stain-etched porous silicon

Properties of Raman scattering in the CdS films, formed on the monocrystalline surface and porous silicon by the chemical bath deposition method

Effects of prior hydrogenation on the structure and properties of thermally nanocrystallized silicon layers

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