Study of the Si/ZnS Multilayer System for Optoelectronic Applications

Abstract

The suitability of the (001) Si/ZnS system for optoelectronic applications is theoretically investigated and compared to the Si/Ge system. The band-structure calculations show that Si/ZnS is superior to Si/Ge in a number of respects: directness of band gap can be easily obtained; and optical intersubband transitions fall within the important 1.3-1.6 Am window.