Study of the size effects in the electrical resistivity of ultrathin (&lt;Cu 40 nm) films in the framework of the statistical conduction models

A relation between grain size and metal film is given by combining the Marom model with experiment data. Based on available theory model, taking into account the surface scattering, boundary scattering and grain size effect, an analytical resistivity model is presented for the 1050 nm thick Cu films. In particular, within a range of 1020 nm, the findings show that the proposed model with consideration of grain size effects is in good agreement with experimental results. Compared with Lim, Wang and Marom' models, the proposed method can reduce the relative standard deviations by 74.24%, 54.85% and 78.29%, respectively.

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Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films

王宁¹,

董刚²,

杨银堂³

et al. 2012

Acta Phys. Sin.

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Study of the size effects in the electrical resistivity of ultrathin (<Cu 40 nm) films in the framework of the statistical conduction models

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References 13 publications

Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films

Study of the grain size effects on electrical resistivity model for ultrathin (10-50 nm) Cu films

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