Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

Defect reduction methods for III-nitride heteroepitaxial films grown along nonpolar and semipolar orientations

“…The densities of the different defects in these samples are 4 × 10 5 -10 6 cm −1 for BSFs, 9 × 10 10 to 2 × 10 11 cm −2 for PDs and 5 × 10 3 to 2 × 10 4 cm −1 for PSFs. The described defects together with their densities are similar to the ones reported in the literature [10,[20][21][22]. The presence of perfect dislocations has also been reported but their density remains low as compared to PDs [23].…”