Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method

Ould-Abbas, A.; Bouchaour, M.; Sari, N. Chabane

doi:10.4236/ojpc.2012.21001

Cited by 11 publications

(7 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, in Ref. [33], the thermal conductivity in PS crystallites has been measured by the micro-Raman technique reporting κ values well below 5 W m −1 K −1 for any ϕ 0.3. This is a further convincing argument supporting the results here presented.…”

Section: κ Versus Porosity: Random Systemsmentioning

confidence: 99%

Model for thermal conductivity in nanoporous silicon from atomistic simulations

et al. 2015

View full text Add to dashboard Cite

By means of molecular dynamics simulations, we have studied heat transport in nanoporous silicon, finding that the Eucken model, widely adopted in the description of thermal transport in macroporous systems, breaks down when pores are nanometer-sized. Present atomistic results are used to inform an extension to this model, effectively describing the relationship between thermal conductivity and interface density, here identified as the key structural characteristic of a porous sample. Our model, validated against a range of pore sizes and distributions, provides a robust framework for the interpretation of the atomistic results, as well as suggesting how to estimate the average pore size through thermal transport measurements

show abstract

Section: κ Versus Porosity: Random Systemsmentioning

confidence: 99%

Model for thermal conductivity in nanoporous silicon from atomistic simulations

et al. 2015

View full text Add to dashboard Cite

show abstract

“…where 𝜒 1 and 𝜒 2 are the thermal conductivity of layer 1 and 2, respectively. 𝜒 1 and 𝜒 2 have been measured on single porous silicon layer under the same etching conditions of layer 1 and 2, respectively [24,25] (see Table 2 in Appendix). Effective thermal conductivities calculated for samples 1-9 are presented in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Evolution of the interface reflectivity where: χ 1, χ 2thermal conductivity of the porous monolayers 1 and 2, respectively (from Ref. [24,25]), χ eff -the effective thermal conductivity, αoptical absorption coefficient of the top photoexcited porous layer, χ exexperimental thermal conductivity value, R -boundary thermal resistance, c 1 , c 2values of phonon velocities (from Ref. [29]).…”

Section: Resultsmentioning

confidence: 99%

Interfacial thermal resistance between porous layers: Impact on thermal conductivity of a multilayered porous structure

Lishchuk

Dekret

Pastushenko

et al. 2018

International Journal of Thermal Sciences

View full text Add to dashboard Cite

Features of thermal transport in multilayered porous silicon nanostructures are considered. Such nanostructures were fabricated by electrochemical etching of monocrystalline Si substrates by applying periodically changed current density.Hereby, the multilayered structures with specific phononic properties were formed. Photoacoustic (PA) technique in gas-microphone configuration was applied for thermal conductivity evaluation. Experimental amplitude-frequency dependencies were adjusted by temperature distribution simulation with thermal conductivity of the multilayered porous structure as a fitting parameter. The experimentally determined values of thermal conductivity were found to be significantly lower than theoretically calculated ones. Such difference was associated with the presence of thermal resistance at the interfaces between porous layers with different porosities arising because of elastic parameters mismatch (acoustical mismatch). Accordingly, the magnitude of this interfacial thermal resistance was experimentally evaluated for the first time.Furthermore, crucial impact of the resistance on thermal transport perturbation in a multilayered porous silicon structure was revealed.generations of integrated circuits (ICs), three-dimensional (3D) integration and ultrafast high-power density transistors has led to a steep increase in microprocessor chip heat flux and growing concern over the emergence of on-chip hot spots. Understanding thermal transport at the nanoscale is therefore crucial for a fundamental description of energy flow in nanomaterials, as well as a critical issue toward achieving optimal performance and reliability of modern electronic, optoelectronic, photonic devices and systems. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the dimension of the structure and the distance over which heat is propagated. The opportunity to shape new nanostructures that efficiently scatter phonons, reducing the thermal conductivity, without altering the electrical properties of the material enables the potential implementation of proficient thermoelectric devices to work as coolers or power generators from waste heat [1][2][3][4]. Recently, there has been much interest in the thermal conductivity of semiconductor superlattices (SLs) due to their promising applications in a variety of devices.Since important surface-to-volume fraction in nanostructured materials, heat conduction across solid-solid interface predominates thermal transport there.Particularly, in SLs, multiple interfaces between different materials play a critical role in the thermal conductivity reduction [5,6]. Cutting-edge experimental techniques have enabled the measurements of the in-plane [7] and cross-plane [8] thermal conductivity

show abstract

“…It is known that laser writing into porous films can be used to oxide regions of the film and hence the thermal properties are expected to change significantly [2]. However there have been no reports characterising the change in the films thermal properties due to local laser irradiation -previous studies have focused only on thermal measurement by a laser before or after the entire film is oxidation [4]. Here we consider a thermography approach to measure the thermal properties of porous silicon irradiated by a focused laser.…”

Section: Introductionmentioning

confidence: 99%

Using thermography to investigate thermal characteristics of porous silicon

Keating

McNiven

Sun

et al. 2018

2018 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)

View full text Add to dashboard Cite

A low cost thermography system capable of sub-milliKelvin resolution has been developed and will be described through this work. The instrument is applied to the study of low thermal conductivity porous silicon films, which is a challenge given that thermography has previously been developed to study only thin (released) films or highly conducting films on insulating substrates. Our preliminary results indicate that the system is capable of measuring porous silicon thin films on highly conducting substrates, but requires application of the pertinent underlying physics for parameter determination.

show abstract

Study of Thermal Conductivity of Porous Silicon Using the Micro-Raman Method

Cited by 11 publications

References 22 publications

Model for thermal conductivity in nanoporous silicon from atomistic simulations

Model for thermal conductivity in nanoporous silicon from atomistic simulations

Interfacial thermal resistance between porous layers: Impact on thermal conductivity of a multilayered porous structure

Using thermography to investigate thermal characteristics of porous silicon

Contact Info

Product

Resources

About