Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Chang, Hui‐Chin; Lee, C. S.; Chen, S. H.; Chang, Edward Yi; He, Jihao

doi:10.1007/s11664-004-0251-2

Cited by 7 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…With their high thermal stability, refractory metals, such as tungsten (W), tantalum (Ta), titanium (Ti), etc., are also widely utilized as the Cu barrier layer. 17,24 Particularly, due to its low electrical resistivity ($5.6 lXÁcm), the W thin film can also be used as an infrared reflector, 17 but it still has a higher thermal emittance than Cu. With the combination of highly thermal stable W and highly conductive Cu, it is possible to realize a high-performance infrared reflector with high thermal stability.…”

Section: Introductionmentioning

confidence: 99%

W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability

Zhang

Chen

Liu

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

The W/Cu thin film structure is deposited by magnetron sputtering to form the infrared reflector for the TiN x O y based selective solar absorber (SSA) that can be used in the low-and middletemperature applications. The structural, chemical, and optical properties of the SSA layers that experienced thermal annealing at different temperatures for various durations have been investigated with the characterization techniques, including X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy, spectroscopic ellipsometry, and spectrophotometry. Without a W layer, the reflectance in both visible and infrared ranges of the SSA increases as a result of the crystallization of the Cu layer at elevated temperatures. With a W layer with appropriate film thickness, the increase of the reflectance in the visible range can be suppressed to maintain a high solar absorptance, whereas a high infrared reflectance can be maintained to achieve a low thermal emittance. It is shown that for the SiO 2 -TiN x O y -W-Cu-Glass SSA with a 15 nm W thin film, thermal annealing can significantly reduce the thermal emittance to a low value (e.g., 4.4% at the temperature of 400 C for annealing at 400 C for 6 h), whereas the solar absorptance can be maintained at a high value (e.g., 92.2% for the annealing at 400 C for 6 h).

show abstract

Section: Introductionmentioning

confidence: 99%

W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability

Zhang

Chen

Liu

et al. 2017

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…This is largely due to the lack of knowledge on the subject. Most of the studies published to date are devoted to the development of technology for the production of separate elements of MMIC by using Cu metallization: ohmic and barrier contacts of transistors [7]- [10], interconnects [11], [12], or backside metallization [13]. Studies [14], [15] address the issues of creating GaAs transistors with fully copper metallization.…”

Section: Introductionmentioning

confidence: 99%

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

Erofeev¹,

Arykov²,

Anishchenko³

et al. 2013

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper metallization of interconnects, air bridges, and backside. The transistors exhibited a source-drain saturation current of I dss = 280 mA/mm and a maximum transconductance of g m = 450 mS/mm at U ds = 1.5 V. The current cut off frequency for transistors with 600 μm total gate width was 80 GHz at U ds = 1.5 V and U gs = −0.35 V, and the power gain limiting frequency was 100 GHz. Output power at 1 dB gain compression with matched input and output load an impedance was P 1db = 26 dBm or 670 mW/mm at an efficiency level of about 28% and the transistor gain G = 11 dB. Measurements were performed at U ds = 8 V, I ds = 1/3 of I dss at 12 GHz. The obtained results demonstrate the promise of Al and Cu metallization in the low cost manufacture of microwave transistors and monolithic integrated circuits based on them.

show abstract

“…With their high thermal stability, refractory metals, such as tungsten (W), tantalum (Ta), and titanium (Ti), are also widely utilized as Cu barrier layer [201,216,217]. Particularly, with the low electrical resistivity (~5.6 μΩ•cm), W thin film is very suitable as an infrared reflector [201], but it still has a higher resistivity than Cu.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of titanium oxynitride thin films and application in selective solar absorber

Zhang¹

View full text Add to dashboard Cite

The selective solar absorber (SSA) is one of the key units in the concentrated solar power (CSP) system, which is promising for generating renewable and clean energy with solar energy. The titanium oxynitride (TiNxOy) thin film based SSA has drawn a lot of attention due to many advantages, such as environmental friendliness, low cost, and excellent optical property. In this thesis, the optical properties of TiNxOy thin films have been investigated and the SSA based on TiNxOy thin film has been designed and modeled.

show abstract

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes

Cited by 7 publications

References 5 publications

W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability

W/Cu thin film infrared reflector for TiNxOy based selective solar absorber with high thermal stability

A Gold Free Aluminum Metalized GaAs PHEMT With Copper Based Air Bridges and Backside

Optical properties of titanium oxynitride thin films and application in selective solar absorber

Contact Info

Product

Resources

About