2009
DOI: 10.1088/1742-6596/152/1/012053
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Study of transparent conducting ZnO:Al films deposited on organic substrate by reactive magnetron sputtering

Abstract: Abstract.A Zn-Al metallic target (Al 2 wt.%)has been used to prepare conductive and transparent aluminium-doped Zinc oxide(ZnO:Al) films on PI substrate by direct current reactive magnetron sputtering.The structure,crystallinity,optical properties,electrical properties and adhesion were investigated using a range of techniques,including AFM 、 XRD 、 spectrophotometry、four-point probe and adhesion tester.The optimal films were prepared with a substrate temperature of 150℃,O 2 /Ar ration of 2:38 and sputtering po… Show more

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“…The synthesis of high quality ZnO thin film is very important for the development of numerous optoelectronic devices. Several efficient methods such as spray pyrolysis (Gomez-Pozos et al 2007), chemical bath deposition (Cao & Cai 2008), spin coating (Xu et al 2006), reactive magnetron sputtering (Li & Wang 2009), and dip coating (Djouadi et al 2009) are widely used to prepare good thin films of ZnO. According to the application desired of ZnO thin films, we have prepared ZnO thin films using a cost effective hydrothermal process at mild conditions of low temperature, atmospheric pressure as well as allowing for the tuning of the band gap of ZnO film via changes in the thickness of seed layer.…”
Section: Introductionmentioning
confidence: 99%
“…The synthesis of high quality ZnO thin film is very important for the development of numerous optoelectronic devices. Several efficient methods such as spray pyrolysis (Gomez-Pozos et al 2007), chemical bath deposition (Cao & Cai 2008), spin coating (Xu et al 2006), reactive magnetron sputtering (Li & Wang 2009), and dip coating (Djouadi et al 2009) are widely used to prepare good thin films of ZnO. According to the application desired of ZnO thin films, we have prepared ZnO thin films using a cost effective hydrothermal process at mild conditions of low temperature, atmospheric pressure as well as allowing for the tuning of the band gap of ZnO film via changes in the thickness of seed layer.…”
Section: Introductionmentioning
confidence: 99%