Study of transport properties and defect density profile in nanocrystalline silicon germanium devices

Study of electronic characteristics of heterojunction with intrinsic thin-layer devices and defect density profile of nanocrystalline silicon germanium devices

“…wavelengths, this informs us of a poor interface between the p-layer and the i-layer [43]. [37] The schematic diagram of the QE measurement setup is shown in Figure 2.18. The light originates from a monochromator, which utilizes a type of grating structure to provide light of various particular wavelengths.…”

“…This phenomenon, as described by Iqbal and Veprek [60], is known as Raman shift. [37] In crystalline silicon, the only optical phonons with zero momentum are the ones with 64 meV energy, resulting in a sharp peak at 520 cm -1 . However, in amorphous silicon, there is a band of energies over which momentum is conserved; the band of small peaks combines to make a broader spectrum with a peak around 480 cm -1 .…”

“…10 Schematic diagram of PECVD reactor[37] Amorphous and nanocrystalline films can be grown with a high frequency capacitively coupled RF plasma (approx. 45 MHz).…”