Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory

Chan, Kevin C.; Lee, P. F.

doi:10.1063/1.2936847

Cited by 24 publications

(21 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[3][4][5][6][7][8][9] However, achieving large-area ordering of AuNPs as required in these applications has proven to be challenging. [10][11][12][13] Methods in synthesis and self-assembly appear to play important roles in the quality of the self-assembled monolayers.…”

Section: ' Introductionmentioning

confidence: 99%

Enhanced Ordering in Gold Nanoparticles Self-Assembly through Excess Free Ligands

et al. 2011

View full text Add to dashboard Cite

Self-assembly of nanometer-sized particles is an elegant and economical approach to achieve dense patterns over large areas beyond the resolution and throughput capabilities of electron-beam lithography. In this paper, we present results of self-assembly of oleylamine-capped gold nanoparticles with 8.0 ± 0.3 nm diameter into densely packed and well-ordered monolayers with center-to-center distance of ∼11 nm. Self-assembly was done in a Langmuir-Blodgett trough and picked up onto Si substrates. The nanoparticles undesirably assembled within micrometer-sized "droplets" that were organic in nature. However, within these droplets, we observed that the addition of the excess ligand, oleylamine, drastically enhanced the self-assembly of the nanoparticles into monolayers with near-perfect ordering. This approach has the potential use in templated self-assembly of nanoparticles for rearranging poorly ordered assembly into a commensurate prepatterned substrate.

show abstract

Section: ' Introductionmentioning

confidence: 99%

Enhanced Ordering in Gold Nanoparticles Self-Assembly through Excess Free Ligands

et al. 2011

View full text Add to dashboard Cite

show abstract

“…Since very thin tunnelling oxide was used in memory devices, a large memory window could be obtained by the application of low program-erase operating voltages. High dielectric constant (high-k) materials are also reported to be used as gate dielectric layers [43]. The programmable memory characteristics of gold nanoparticle-based memory devices with HfAlO tunnelling/blocking oxide layers are reported.…”

Section: Operations Of Non-volatile Memory Devicesmentioning

confidence: 99%

Recent progress in gold nanoparticle-based non-volatile memory devices

Jang‐Sik

2010

Gold Bull

View full text Add to dashboard Cite

Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

show abstract

“…Materials with a high dielectric constant reportedly act as a gate dielectric layer. [25] There is a report on the programmable memory characteristics of gold nanoparticle-based memory devices with HfAlO tunneling/blocking oxide layers. The report also explains how gold nanoparticles can be synthesized in situ by annealing the substrate during pulsedlaser deposition of gold (at 300°C and 550°C).…”

Section: Silicon-based Nfgm Devicesmentioning

confidence: 99%

Review paper: Nano-floating gate memory devices

Lee

2011

Electron. Mater. Lett.

View full text Add to dashboard Cite

In recent decades, memory device technology has advanced through active research and the development of innovative technologies. Single transistor-based flash memory device is one of the most widely used forms of memory devices because their device structure is simple and the scaling is feasible. A nano-floating gate memory (NFGM) device is a kind of flash memory devices that uses nanocrystals as a charge-trapping element. The use of nanocrystals has advantages over memory devices that rely on other methods such as discontinuous trap sites and controllable trap levels. Nowadays considerable progress has been made in the field of NFGM devices, and novel application areas have been explored extensively. This review article focuses on new technologies that are advancing these developments. The discussion highlights recent efforts and research activities regarding the fabrication and characterization of nonvolatile memory devices that use a nanocrystal layer as a charge-trapping element. The review concludes with an analysis of device fabrication strategies and device architectures of NFGM devices for possible application to devices that are organic, printed, and flexible.

show abstract

Study of tunneling mechanism of Au nanocrystals in HfAlO matrix as floating gate memory

Cited by 24 publications

References 18 publications

Enhanced Ordering in Gold Nanoparticles Self-Assembly through Excess Free Ligands

Enhanced Ordering in Gold Nanoparticles Self-Assembly through Excess Free Ligands

Recent progress in gold nanoparticle-based non-volatile memory devices

Review paper: Nano-floating gate memory devices

Contact Info

Product

Resources

About