Study of twins in GaAs, GaP and InAs crystals

Chen, T.P.; Chen, F.R.; Chuang, Y.C.; Guo, Yutong; Peng, J. G.; Huang, Tsung Hui; Chen, L.J.

doi:10.1016/0022-0248(92)90055-n

Cited by 25 publications

(11 citation statements)

References 12 publications

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“…Similar observations were made for coherent twin boundaries in GaAs (Lee et al, 1990), CdTe (Durose et al, 1985), ZnSe (Williams and Wright, 1987), and InAs and GaP (Chen et al, 1992). Using a CBED technique, the absolute polarity across ⌺ = 3 {111} coherent and {112} incoherent twin boundaries in polycrystalline GaP samples have been characterized.…”

Section: Discussionsupporting

confidence: 63%

Characterization of the Absolute Crystal Polarity across Twin Boundaries in Gallium Phosphide Using Convergent-Beam Electron Diffraction

1999

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: The measurement of absolute crystal polarity is crucial to understanding the structural properties of many planar defects in compound semiconductors. Grain boundaries, including twin boundaries, in the sphalerite lattice are uniquely characterized by the crystallographic misorientation of individual grains and the direction of the crystal polarity in domains adjoining the grain boundary. To evaluate crystal polarity in gallium phosphide (GaP), asymmetrical interference contrast in convergent-beam electron-diffraction (CBED) patterns was used to ascertain the nature and direction of polar bonds. The direction of the asymmetry in the electron diffraction reflections was correlated with the crystal polarity of a sample with known polarity. The CBED technique was applied to determine the polar orientation of grains adjoining Sigma = 3 coherent and lateral twin boundaries in polycrystalline GaP.

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Section: Discussionsupporting

confidence: 63%

Characterization of the Absolute Crystal Polarity across Twin Boundaries in Gallium Phosphide Using Convergent-Beam Electron Diffraction

1999

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“…We have already seen the case of Brazil twins in quartz. Another example is that of twins in III-V compound semiconductors, which have been identified by Chen et al (1992) to be 60°-rotation twins, a nonferroic operation in the present context.…”

Section: Growth Twinsmentioning

confidence: 79%

“…Similarly, the 60°-rotation growth twins in crystals of GaAs, GaP and InAs are examples of B-twins (Chen et al, 1992).…”

Section: B-twinsmentioning

confidence: 99%

A Tensor Classification of Twinning in Crystals

Wadhawan¹

1997

Acta Cryst Sect A

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A classification scheme for twinning in crystals is proposed. It is based on a tensor distinction of properties across the twin interface. The classification employs concepts from the theory of transformation twinning. The adequacy of such a scheme for other main types of twins, namely growth twins and nonferroelastic mechanical twins, is examined, and found to be satisfactory. All twins can be divided into four fundamentally distinct categories: ferroelastic or S-twins, nonferroelastic-ferroic or N-twins, Bollmann or B-twins and translation or T-twins. A comparison is made of the attributes of these four types of twins. A compact and informative twin symbol is introduced, which carries information about the tensor properties in which the twins differ. Information about any underlying total or partial coincidence sublattice is incorporated by attaching a subscript t or p to the main twin symbol. Several examples are discussed. This paper also introduces a rigorous definition of prototype symmetry in terms of the 'nondisruption condition'.

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“…Twins in III-V and II-VI materials were identified to be rotation twins [183,184]; inversion twins are energetically unfavorable. Two kinds of twins are distinguished: bulk (or standard) twins, which proceed through the crystal, and patch twins, which grow out and are therefore benign with regard to wafer yield.…”

Section: Twinsmentioning

confidence: 99%