Study of uniformity of high performance AlInN HEMT with ultra‐thin barrier

Abstract

High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to accelerate, and consequently the sheet resistant uniformity degrades due to the difficulty in individual thickness uniformity control at this level. Significant better uniformity was achieved after improvement in AlN process. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Ultra‐thin barrier quaternary InAlGaN HEMTs with state of the art sheet resistance

“…The short channel effect, in spite of being reduced, still exists even a 7~8 nm InAlN barrier. However, with the lattice ternary InAlN barrier lattice-matched to GaN buffer, the sheet resistance (R sh ) increases sharply as the barrier thickness reduces below 5 nm due to partial depletion of the 2DEG channel [5].…”