Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN

Ye, Li; Liang, Yongchao

doi:10.1016/j.mtcomm.2024.109586

Materials Today Communications

2024

DOI: 10.1016/j.mtcomm.2024.109586

|View full text |Cite

Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN

Li Ye,

Yongchao Liang

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 54 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

A Review of Bandgap Engineering and Prediction in 2D Material Heterostructures: A DFT Perspective

Oh,

Song,

Bae

2024

IJMS

View full text Add to dashboard Cite

The advent of two-dimensional (2D) materials and their capacity to form van der Waals (vdW) heterostructures has revolutionized numerous scientific fields, including electronics, optoelectronics, and energy storage. This paper presents a comprehensive investigation of bandgap engineering and band structure prediction in 2D vdW heterostructures utilizing density functional theory (DFT). By combining various 2D materials, such as graphene, hexagonal boron nitride (h-BN), transition metal dichalcogenides, and blue phosphorus, these heterostructures exhibit tailored properties that surpass those of individual components. Bandgap engineering represents an effective approach to addressing the limitations inherent in material properties, thereby providing enhanced functionalities for a range of applications, including transistors, photodetectors, and solar cells. Furthermore, this study discusses the current limitations and challenges associated with bandgap engineering in 2D heterostructures and highlights future prospects aimed at unlocking their full potential for advanced technological applications.

show abstract

A Review of Bandgap Engineering and Prediction in 2D Material Heterostructures: A DFT Perspective

Oh,

Song,

Bae

2024

IJMS

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN

Cited by 1 publication

References 54 publications

A Review of Bandgap Engineering and Prediction in 2D Material Heterostructures: A DFT Perspective

A Review of Bandgap Engineering and Prediction in 2D Material Heterostructures: A DFT Perspective

Contact Info

Product

Resources

About