Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures

Abstract

Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure

Profiling of Current Transients in Capacitor Type Diamond Sensors

“…The simplified approach exploited describes well the qualitative experimental observations [ 46 ]: (i) at large densities of injected carriers (even for the localized initial domain) profiling of current transients by varying applied voltage leads to prevailing amplitude of the second component i 2 attributed to diffusion (as the externally introduced charge on electrodes is screened by the injected excess charge, Figure 6 ); (ii) at moderate densities of excess carriers within the injected bulk domain ( Figure 4 c and Figure 6 ) and at relatively low applied voltages both components are observable, while the initial current i 1 component prevails due to 1 / ψ( t ) for ψ( t ) << ψ e0 ( t ) (Equation (10)); (iii) both components can also be observable ( Figure 5 and Figure 6 ) for the perpendicular injection regime (for the excitation laser beam relative to field direction [ 47 ]) if an outspreading excitation beam overwhelms the inter-electrode gap; (iv) in voltage dependent profiling of transients both components overlap when threshold value of the applied voltage is sufficient to separate the electron and hole sub-domains over the entire inter-electrode gap.…”

Simulations of Operation Dynamics of Different Type GaN Particle Sensors

“…Detailed derivation of the main relations and discussion of regimes is presented in [ 17 , 28 ]. For the range of the applied reverse voltages U bi < U < U FD on the n-type conductivity base and using an assumption that the electron domain is injected nearby the metallurgic abrupt junction, the electric field is capable to separate electron-hole pairs and to extract holes into p + -type emitter.…”

“…Using the methodology described in [ 17 , 28 ], an instantaneous field distribution and depletion width changes dependent on the instantaneous position of the injected domain are obtained by taking Poisson integrals. An instantaneous depletion width w q and, alternatively, E 1 (0), can be expressed as: and: …”

Currents Induced by Injected Charge in Junction Detectors

“…A few aspects of the impact of carrier trapping on the injected charge transients for a partially depleted junction layer have been mentioned in [ 14 , 18 ]. Evaluation of other parameters (e.g., t dr ) of the transients determined by the injected charge drift and trapping becomes even more complicated, and it can be implemented only by the numerical methods.…”