Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

A Review on Gallium Oxide Materials from Solution Processes

“…The XRD studies revealed that the synthesized β-Ga 2 O 3 films had peaks corresponding to { 01} family of planes, which proved the epitaxial relationship of β-Ga 2 O 3 [ 01]//[0001]Al 2 O 3 and the same was reported in other studies [ 197 , 198 ]. The XRD study of 400 °C pre-heated and 1000 °C post annealed β-Ga 2 O 3 thin film grown on the ~7° off angled sapphire substrate revealed that the film had the major peak corresponding to (400) plane of β-Ga 2 O 3 which supports the out-plane epitaxial relationship of β-Ga 2 O 3 [400]//[11 3]Al 2 O 3 for the β-Ga 2 O 3 films grown on ~7° off angled sapphire substrate [ 199 , 200 ].…”

Effect of Oxygen Plasma on β-Ga2O3 Deep Ultraviolet Photodetectors Fabricated by Plasma-Assisted Pulsed Laser Deposition

“…The β-crystal phase is the most stable state, and the other crystalline phases are transformed into the β-crystal phase through heat treatment. − Therefore, β-Ga 2 O 3 is the most intensively studied material and has the highest potential in industry. Many deposition techniques have been developed to synthesize Ga 2 O 3 films such as radio frequency (RF) magnetron sputtering, − atomic laser deposition, , vapor phase epitaxy, − molecular beam epitaxy, − low-pressure chemical vapor deposition, − metal–organic chemical vapor deposition, − solution-based spray pyrolysis, , sol–gel method, , and pulsed laser deposition (PLD). − Among these techniques, the PLD technique used in this study is suitable for growing high-quality films because of the well-controlled stoichiometric transfer of the target material.…”

(3̄10)-Oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

“…[23][24][25][26] In a few reports, depending on the growth method and growth parameters such as temperature and VI/ III ratio, other out-of-plane orientations such as (3 ¯10) and (101) could also be observed when β-Ga 2 O 3 films have been grown on sapphire substrates. [27][28][29] Although the (3 ¯10) plane of β-Ga 2 O 3 with either solely oxygen or gallium atoms provides an alternative for the atomic arrangement on (0001) sapphire, just like the (2 ¯01) plane (as shown in Fig. 1), 30,31 the growth of (3 ¯10)-oriented β-Ga 2 O 3 films on (0001) sapphire substrates has been rarely reported, which may be because (3 ¯10)-oriented heteroepitaxy on sapphire is not energetically favorable.…”

“…21,[32][33][34][35] In our previous report, the schematically geometrical mode has been discussed and proposed that ∼7°off-angled (0001) sapphire toward the 〈112 ¯0〉 direction would make the singledomain growth of β-Ga 2 O 3 films possible and obtain higher crystal-quality β-Ga 2 O 3 films with relatively smooth surfaces. 27 In this work, the effect of growth temperatures, O 2 flowsrates, HCl flows-rates and off-angles of sapphire substrates on the crystal quality and growth orientation of heteroepitaxial β-Ga 2 O 3 films, as well as the domain growth and suppression mechanism, have been investigated systematically by analysis of the structures and microstructures.…”

“…21,32–35 In our previous report, the schematically geometrical mode has been discussed and proposed that ∼7° off-angled (0001) sapphire toward the 〈112̄0〉 direction would make the single-domain growth of β-Ga 2 O 3 films possible and obtain higher crystal-quality β-Ga 2 O 3 films with relatively smooth surfaces. 27…”