Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Cao, Shurui; Ke, Xiaoyu; Ming, Siting; Wang, Duowei; Li, Tong; Liu, Bingyan; Ma, Yao; Li, Yun; Yang, Zhimei; Gong, Ming; Huang, Ming-min; Bi, Jinshun; Xu, Youqian; Xi, Kai; Xu, Gaobo; Majumdar, Shubhankar

doi:10.1007/s10854-019-01450-6

Cited by 7 publications

(1 citation statement)

References 28 publications

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“…In advanced MOS devices, SiO 2 , which is widely used as the gate material in traditional MOS devices, is not applicable anymore as the leakage current and static power consumption would increase dramatically when the thickness of SiO 2 decreases to lower than 2 nm, which would seriously impact the properties of MOS devices. Alternative materials with higher permittivity which can be called high-k materials have been proposed to replace SiO 2 as the gate dielectric such as HfO 2 , Al 2 O 3 , ZrO 2 , La 2 O 3 [1,2]. High-k materials that can be used as the gate dielectric in MOS devices must have a relatively larger bandgap to ensure large enough conduction band offset and valence band offset between the gate dielectric and the semiconductor substrate, which can restrict the charge transport and then reduce the leakage current of the device.…”

Section: Introductionmentioning

confidence: 99%

Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Ding

2021

Micromachines

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The radiation response of Al2O3 on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al2O3 based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad(Si)/4 Mrad(Si). The generation, transportation and trapping characteristics of radiation induced charges were studied by using electronic, physical and chemical methods. Firstly, the radiation induced trapped charge density in Al2O3 is up to 1012 cm−2, with the effective trapping efficiency of 7–20% under irradiation. Secondly, the leakage current through Al2O3 changes little with the increase of radiation total dose. Thirdly, oxygen vacancy in Al2O3 and O dangling bonds and Al-Si metallic bonds at Al2O3/Si interface are dominant radiation induced defects in Al2O3/Si system, and the valence band offset between Al2O3 and Si is found to decrease after irradiation. From the results we can see that Al2O3 is radiation resistant from the aspect of leakage current and crystallization characteristics, but the radiation induced charge trapping and new defects in Al2O3/Si structure cannot be ignored. This paper provides a reference for the space application of Al2O3 based MOS devices.

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Section: Introductionmentioning

confidence: 99%

Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Ding

2021

Micromachines

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The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

Mutale¹,

Zulu²,

Yılmaz³

2023

J Mater Sci: Mater Electron

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Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

Ding

Liu

2021

AIP Advances

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The radiation response of HfO2 films on a silicon substrate under gamma rays is studied in this article. HfO2 films with the thickness of 12.8 and 4.3 nm are prepared on a p-type silicon substrate by using the atomic layer deposition method, and the HfO2/Si MOS structure is irradiated under gamma rays with the total dose of 1.2/2.5/4 Mrad. The generation, transportation, and trapping characteristics of radiation induced charges are studied by using electronic, physical, and chemical methods. First, radiation induced oxide and interface trapped charge densities are found to be up to 1012 cm−2, and oxygen vacancies in HfO2 and Hf–Si metallic bonds at the HfO2/Si interface are dominant defects in the HfO2/Si system. Second, the leakage current through HfO2 increases with the increase in the radiation total dose and the crystallinity also increases after a large total dose of irradiation. Third, the valence band offset between HfO2 and Si is found to decrease slightly after irradiation. From the results, we can see that HfO2 is radiation resistant from the aspect of charge trapping even under a very large total dose of radiation, but the radiation induced leakage current and crystal structure change in the HfO2 film cannot be ignored. This provides a reference for microelectronic devices working in the space environment.

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Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

Cited by 7 publications

References 28 publications

Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation

The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

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