Ultraviolet (UV) photodetectors (PDs) are essential for various applications, but traditional materials face challenges in cost, fabrication, and performance. This study introduces dimethylamine bismuth iodide (DMABI) as a promising lead‐free perovskite for UV PDs, particularly in the UVC region. DMABI demonstrates exceptional device parameters, including an ultralow dark current of 0.12 pA at 0.05 V, a high on/off ratio of 7.1 × 104, and a peak detectivity of 3.18 × 1013 Jones. The unique structure of DMABI, with isolated octahedral units, ensures minimal connectivity, significantly reducing dark current. When exposed to high‐energy UV light, carriers gain sufficient energy to hop between octahedrally coordinated bismuth centres, resulting in substantial photocurrent. The small size of the organic cation facilitates efficient charge transfer, contributing to high responsivity (1.46 A W−1) and external quantum efficiency (up to 717%). These results establish DMABI as a superior, low‐cost candidate for UV photodetection, addressing limitations of existing materials. The study provides insights into the molecular mechanisms driving these characteristics and highlights potential for future advancements in UV PD technology.