2024
DOI: 10.1088/1361-6641/ad5b80
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Study on a p-GaN HEMT with composite passivation and composite barrier layers

Junji Cheng,
Queyang Wang,
Yikai Liu
et al.

Abstract: A novel structure of p-GaN high-electron-mobility transistor (HEMT) is proposed and studied. It features two composite layers. One is the composite passivation (CP) layer consisting of Si3N4 and high-permittivity (HK) film. The other is a composite barrier (CB) layer consisting of Al x Ga1−x N/AlN/Al0.23Ga0.77N. Due to the coordinated effect of CP and CB, the specific on-resistance (R ON, SP) can be reduced under the premise of ensuring… Show more

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