Although Ni-W substrate with high W content (>5at.%) substrates have been developed successfully, the quality of cube texture and grain boundary, as well as extensive applications in coated conductors should be further improved. In the present work, once intermediate annealing treatment (IAT) at 500˚C for 2 h has been employed to optimize the deformation and recrystallization textures in Ni-7at.%W (Ni7W) substrates. As a result, competitive high cube texture content (<10˚) and low angle grain boundary fraction (<10˚) were realized (98.5% and 91.2%, respectively). A Gd 2 Zr 2 O 7 (GZO) buffer layer with strong cube texture and high-quality surface deposited successfully on the Ni7W substrate using the chemical solution deposition method, demonstrating the advanced GZO/Ni7W template is promising for coated conductors.