Study on amorphous carbon nitride film prepared by facing target sputtering

Correlation between electrochemical reactivity and surface chemistry of amorphous carbon nitride films

“…5), one can notice that the main difference between the as-prepared and cathodically pretreated samples is a slight decrease of the intensity at a binding energy around 287.5 eV, which could be attributed to sp 3 CN bonds. 13,14 This finding is in good agreement with the N1s spectra also shown in Fig. 5.…”

Impact of the annealing temperature on Pt/g-C 3 N 4 structure, activity and selectivity between photodegradation and water splitting

“…Figure 3 B) shows that the band gap decreases when the synthetic temperature is increased up to 550 °C, in correlation with the C/N ratio. This is in line with previous findings on amorphous carbon doped with nitrogen suggesting that as the size of the sp 2 C=N clusters increases, the state density of π bonding in the sp 2 cluster increases leading to a decrease of the optical band gap [13][14][15]. It has to be noted that the material synthetized at 600 °C presents two different band gaps, which has not been reported in the literature so far [6,8,9,16].The lower one being in the continuity with the band gaps obtained for the materials synthesized at lower temperature while the higher one is closer to the data obtained at 650 °C.…”

Nano-scratch resistance study of nitrogenated amorphous carbon films prepared by unbalanced magnetron sputtering

“…1(a)) increases from 0.64 nm/kW s, in a pure Ar discharge, to the maximum value of 1.11 nm/ kW s in a discharge with an N 2 /Ar gas flow ratio of 8 17 . This variation of the deposition rate versus the N 2 /Ar gas flow ratio has already been observed in reactive magnetron sputtering [4][5][6]. The increase in the deposition rate may be due to the promoted formation of C-N radicals at target surface (i.e.…”

“…This result is in good agreement with previous CMS results that an appropriate incorporation of nitrogen into carbon film increases the hardness of the film [1], but too much nitrogen incorporation makes the film soft. For the films deposited by UBMS, there is a maximum depth of 1.42 nm for the film prepared at an N 2 / Ar ratio of 6 19 and the minimum depth of 0.92 nm was observed for the pure carbon film. The result of scratching depth shows that the pure carbon film is the most scratching resistant, which is in good agreement with Raman result that the pure carbon has the highest sp 3 faction of carbon atoms in the film.…”