Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Zhang, Zefang; Zhang, Wenjuan; Zhang, Shanduan; Yan, Wei

doi:10.1149/2.0141710jss

Cited by 14 publications

(11 citation statements)

References 17 publications

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“…Xu et al 12 reported that pyrrole nitrogen can weaken the Al-O bond via the bonding between oxygen and nitrogen or the adjacent carbon atom, and improve the chemical reaction between sapphire and colloidal silica, but the authors didn't carry out an in-depth study. Zhang et al 13 studied the effect of halogen on the c-plane sapphire CMP, the results showed that halogen improved the removal rate of sapphire. However, the removal mechanism of sapphire has not been studied.…”

mentioning

confidence: 99%

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

Cui

Niu

Zhou

et al. 2019

ECS J. Solid State Sci. Technol.

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Sapphire is widely used in solid lasers, semiconductor chip substrates, light emitting diodes substrates and other high-tech fields for its excellent mechanical and optical properties. At the same time, the chemical mechanical polishing(CMP) performance and quality need to be improved for different crystal plane sapphire substrate. In this paper, in order to improve the removal rate NaCl was used as an additive in sapphire slurry. From the CMP experiment results of a- and c-plane sapphire, it was found that higher material removal rate (MRR) and lower surface roughness (Sq) were obtained by adding NaCl with the concentration of 0.2wt% in sapphire slurry. In order to reveal the action mechanism of NaCl, scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) measure methods were used. From the SEM measure results it can be seen that there were microscopic corrosion pits on substrate surface, which indicates that chemical reaction took place between NaCl and substrate material. From XPS measure results it was verified that sodium tetrachloroaluminate (NaAlCl4) was formed during CMP. However, during the experiment, it was found there was a very small amount of silica sol crystalline particles after NaCl was added to the slurry. After analyzing the formation mechanism of crystalline particles, KCl was selected to replace NaCl. The same polishing effect was obtained and there were no crystalline particles found in the slurry tank. From the results it is found chloride ions played an important role in improving the removal rate and surface roughness of sapphire substrate.

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mentioning

confidence: 99%

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

Cui

Niu

Zhou

et al. 2019

ECS J. Solid State Sci. Technol.

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“…•− ) with sapphire generates aluminum sulfate (Al 2 (SO 4 ) 3 ) and potassium sulfate (K 2 SO 4 ) on the surface, and results in an increase in MRR. In addition, strong acids and bases such as HNO 3 [149], KOH [150,151], and Sr(OH) 2 [152]were used as pH regulators to improve polishing MRR. These substances may be harmful to operators.…”

Section: Sapphire Wafersmentioning

confidence: 99%

A review: green chemical mechanical polishing for metals and brittle wafers

Liu¹,

Zhang²,

Wu³

et al. 2021

J. Phys. D: Appl. Phys.

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Chemical mechanical polishing (CMP) is the most effective technique to obtain global and local planarization of metal and brittle surfaces. Conventionally, CMP slurries contain strong acids, alkalis, or hazardous chemicals, which easily cause widespread environmental pollution and are harmful to the operators. It is a challenge to develop a novel green CMP slurry with eco-friendly and non-toxic compositions. Some substances with special structures contain versatile functional groups and have unique physical and chemical properties, including excellent chelating ability, ionization activity, biocompatibility and biodegradability, which have attracted the interest of CMP processing techniques. Therefore, researchers have begun to explore CMP slurries composed of environmentally friendly compositions. This review discussed the latest developments in the field of green CMP of metals and brittle wafers. The research on green CMP slurries was summarized and the future of the field was discussed.

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“…Again, the chemical reaction between the substrate and abrasives enhanced the chemical influence and resulted in high MRRs. Zhang et al (2017b) performed CMP of sapphire wafers using silica-based slurries as well and found that most of the alkali metal and halogen salts could enhance MRRs, which also relied on particle size and the alkaline agents. Nguyen et al (2014) studied multiphase modeling and simulated the abrasive behavior and slurry distribution with a new dynamic model.…”

Section: Chemical Mechanical Polishing For Semiconductor Devicesmentioning

confidence: 99%

Recent advances and applications of abrasive processes for microelectronics fabrications

Zhong

2019

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Purpose This paper aims to review recent advances and applications of abrasive processes for microelectronics fabrications. Design/methodology/approach More than 80 patents and journal and conference articles published recently are reviewed. The topics covered are chemical mechanical polishing (CMP) for semiconductor devices, key/additional process conditions for CMP, and polishing and grinding for microelectronics fabrications and fan-out wafer level packages (FOWLPs). Findings Many reviewed articles reported advanced CMP for semiconductor device fabrications and innovative research studies on CMP slurry and abrasives. The surface finish, sub-surface damage and the strength of wafers are important issues. The defects on wafer surfaces induced by grinding/polishing would affect the stability of diced ultra-thin chips. Fracture strengths of wafers are dependent on the damage structure induced during dicing or grinding. Different thinning processes can reduce or enhance the fracture strength of wafers. In the FOWLP technology, grinding or CMP is conducted at several key steps. Challenges come from back-grinding and the wafer warpage. As the Si chips of the over-molded FOWLPs are very thin, wafer grinding becomes critical. The strength of the FOWLPs is significantly affected by grinding. Originality/value This paper attempts to provide an introduction to recent developments and the trends in abrasive processes for microelectronics manufacturing. With the references provided, readers may explore more deeply by reading the original articles. Original suggestions for future research work are also provided.

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Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Cited by 14 publications

References 17 publications

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

Effect of Chloride Ions on the Chemical Mechanical Planarization Efficiency of Sapphire Substrate

A review: green chemical mechanical polishing for metals and brittle wafers

Recent advances and applications of abrasive processes for microelectronics fabrications

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