Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted

Zhai, Ke; He, Qiang; Li, Liang; Ren, Yi

doi:10.1016/j.ultras.2017.04.005

Cited by 45 publications

(10 citation statements)

References 15 publications

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“…Chemical mechanical polishing is used to smooth the surface by removing the residual damages from lapping, and the material removal of conventional CMP mainly originates from the synergistic action of chemical corrosion and abrasive mechanical action. In ultrasonic CMP, the enhanced chemical corrosion, enhanced contact force between the contact particles and the machining surface, and the impact of the suspending particles to the machining surface contribute to material removal, by simultaneously weakening the binding force of the ions that makes the SiC surface material easy to be removed [ 17 , 19 ]. Besides, the ultrasonic can effectively reduce the wear coefficients [ 21 ], which can convert the severely damaged action of two-body abrasion to the less damaged action of three-body abrasion thereby leading to little new scratches compared to the conventional CMP.…”

Section: Resultsmentioning

confidence: 99%

“…Lu et al [ 16 , 17 ] increased the MRR, lowered the surface roughness, and improved the surface flatness for a sapphire substrate by virtue of ultrasonic flexural vibration assisted CMP with a self-designed flexural vibrating plate. Li et al [ 18 , 19 ] made experimental studies on ultrasonic and megasonic vibration assisted CMP for silicon wafers and the results implied a better effect than CMP without ultrasonic. Liu et al [ 20 ] also had a study on the elliptical vibration-aided CMP of monocrystalline silicon, where a mathematical model of MRR and the experimental verification were performed.…”

Section: Introductionmentioning

confidence: 99%

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Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Shi

et al. 2018

Materials

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A new method of ultrasonic chemical mechanical polishing (CMP) combined with ultrasonic lapping is introduced to improve the machining performance of carbide silicon (SiC). To fulfill the method, an ultrasonic assisted machining apparatus is designed and manufactured. Comparative experiments with and without ultrasonic assisted vibration are conducted. According to the experimental results, the material removal rate (MRR) and surface generation are investigated. The results show that both ultrasonic lapping and ultrasonic CMP can decrease the two-body abrasion and reduce the peak-to-valley (PV) value of surface roughness, the effect of ultrasonic in lapping can contribute to the higher MRR and better surface quality for the following CMP. The ultrasonic assisted vibration in CMP can promote the chemical reaction, increase the MRR and improve the surface quality. The combined ultrasonic CMP with ultrasonic lapping achieved the highest MRR of 1.057 μm/h and lowest PV value of 0.474 μm. Therefore this sequent ultrasonic assisted processing method can be used to improve the material removal rate and surface roughness for the single crystal SiC wafer.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Shi

et al. 2018

Materials

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“…Theoretical analyses demonstrated that, in the process of megasonic-assisted chemical-mechanical polishing, the vibrations enable a part of idle particles, stored in the cells of the polishing pad, to squeeze into the contact areas [3]. The results in article [4] showed that megasonic assisted chemical mechanical polishing is a feasible method to improve polishing efficiency and surface quality. The need for polishing silicon wafer is to obtain a smooth surface for sprucing the semiconductor devices on the wafer surface [5].…”

Section: Open Accessmentioning

confidence: 99%

Adaptive neuro fuzzy determination of impactful factors on non-uniformity of polished surface

Petković¹

2019

JIEC

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In this study, the neuro fuzzy logic selection of the most influential parameters for non-uniformity of polished surface was performed. The influence of three parameters was analyzed: carrier load, thickness and the pads elastic modulus. Adaptive neuro fuzzy logic or ANFIS was used for establishing the nonlinear relationships between the three parameters and the non-uniformity polished surface. Dataset for training and testing procedure was extracted by finite element model. According to the regression models, thickness of pad has the greatest influence on the non-uniformity. Moreover, elastic modulus and pad thickness are the optimal combination of non-uniformity. Results could be useful in the improvement of chemical polishing process.

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“…To obtain such ultrafine flat surfaces, in general, chemical mechanical polishing (CMP) is a suitable and practical choice. CMP has been applied to the polishing of a diverse range of materials, such as silicon, Si 3 N 4 , sapphire, and GaN. , In the case of diamond, CMP using a slurry of NaOH and KOH was reported to afford an atomically smooth (root-mean-square roughness of less than 0.5 nm) and damage-free surface . However, the CMP removal rate for diamond remains low owing to its high hardness and chemical inertness.…”

Section: Introductionmentioning

confidence: 99%

Atom-by-Atom and Sheet-by-Sheet Chemical Mechanical Polishing of Diamond Assisted by OH Radicals: A Tight-Binding Quantum Chemical Molecular Dynamics Simulation Study

Kawaguchi

Wang

et al. 2021

ACS Appl. Mater. Interfaces

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Ultraflat and damage-free single-crystal diamond is a promising material for use in electronic devices such as field-effect transistors. Diamond surfaces are conventionally prepared by the chemical mechanical polishing (CMP) method, although the CMP efficiency remains a critical issue owing to the extremely high hardness of diamond. Recently, OH radicals have been demonstrated to be potentially useful for improving the CMP efficiency for diamond; however, the underlying mechanisms are still elusive. In this work, we applied our previously developed CMP-specialized tight-binding quantum chemical molecular dynamics simulator to comprehensively elucidate the CMP mechanisms of diamond assisted by OH radicals. Our simulation results indicate that the diamond surface is oxidized by reactions with OH radicals and then a concomitant surface reconstruction takes place due to the distorted and unstable nature of the oxidized diamond surface structure. Furthermore, we interestingly reveal that the reconstruction of the diamond surface ultimately leads to two distinct removal mechanisms: (i) gradual atom-by-atom removal through the desorption of gaseous molecules (e.g., CO 2 and H 2 CO 3 ) and (ii) drastic sheet-by-sheet removal through the exfoliation of graphitic ring structures. Hence, we propose that promoting the oxidation-induced graphitization of the diamond surface may provide a route to further improving the CMP efficiency.

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Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted

Cited by 45 publications

References 15 publications

Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

Adaptive neuro fuzzy determination of impactful factors on non-uniformity of polished surface

Atom-by-Atom and Sheet-by-Sheet Chemical Mechanical Polishing of Diamond Assisted by OH Radicals: A Tight-Binding Quantum Chemical Molecular Dynamics Simulation Study

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