Study on deflection of X-ray mask membrane in stepper motion

Mitsui, Soichiro; Tanaka, Amane; Takaki, Ryuji; Itoh, Tohru; Atoda, Nobufumi

doi:10.1016/0167-9317(95)00226-x

Cited by 2 publications

(1 citation statement)

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“…Yanof et al (1993) obtained an exact solution for relaxation of membrane deformation in the case where an initial deformation is given and the wafer is at rest. Mitsui et al (1996) did an experiment to measure the mask membrane deformation, where the gap width was changed by ±2 m during the time of 40 ms to a ÿnal gap width, which was varied from 10 to 200 m. They observed that the maximum deformation (de ection at the membrane center) depended on the membrane tension and the ÿnal gap width, and it became as much as 6 m for the ÿnal gap of 10 m. When the gap was increased by 2 m, the ÿnal gap width to produce maximum deformation varied within 30 -50 m.…”

Section: Introductionmentioning

confidence: 99%

Deformation of a tensile membrane adjacent to a moving wall caused by viscous flow

Kashiwabara¹,

Takaki

2000

Fluid Dyn. Res.

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Theoretical analysis is done for deformation of a tensile membrane caused by viscous ow between the membrane and a solid boundary (wafer) placed adjacent to the membrane. The membrane and its support are assumed to have circular shapes. The boundary is assumed to move perpendicularly to the membrane by a small fraction of the gap width. The Hele-Shaw ow theory is applied to the ow. Variation of the central gap width is obtained, and it is shown that the maximum membrane deformation depends on the membrane tension and the ÿnal gap width. The dependence agrees with experimental results.

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Section: Introductionmentioning

confidence: 99%

Deformation of a tensile membrane adjacent to a moving wall caused by viscous flow

Kashiwabara¹,

Takaki

2000

Fluid Dyn. Res.

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Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes

Awad¹,

Lavallée²,

Beauvais³

et al. 2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A process aimed at fabricating proximity x-ray lithography masks is presented. In this technique, the Ta absorber layer is deposited and patterned on the back side of the membrane and nonspin-coated electron sensitive layers were used in order to achieve high resolution patterning of this absorber. The advantages gained by this approach include a reduction of the membrane temperature during the plasma etching step of the absorber patterns without using any cooling gas. This temperature reduction results from the direct contact of the membrane with a cooling plate. This approach also allows increased protection of the absorber patterns from contamination during exposure of the mask. A third advantage is that the smooth surface of the mask exposed to the wafer in the x-ray lithography stepper may also make it possible to reduce the gap between wafer and mask, thus achieving increased resolution with the x-ray lithography process.

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Study on deflection of X-ray mask membrane in stepper motion

Cited by 2 publications

References 1 publication

Deformation of a tensile membrane adjacent to a moving wall caused by viscous flow

Deformation of a tensile membrane adjacent to a moving wall caused by viscous flow

Fabrication of x-ray masks using evaporated electron sensitive layers for back patterning of membranes

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