2019 18th International Conference on Optical Communications and Networks (ICOCN) 2019
DOI: 10.1109/icocn.2019.8933926
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Study on DFB semiconductor laser based on sampled moiré grating integrated with grating reflector

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Cited by 4 publications
(6 citation statements)
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“…The 60-channel DFB laser array produced by REC technology can control the wavelength error of 83% of the laser within ±0.20 nm and 93.5% of the laser within ±0.30 nm [51], greatly improving the yield. REC technology can not only be used in the manufacturing of parallel DFB laser arrays but also in the manufacturing of series DFB laser arrays [22] and series-parallel combined DFB laser arrays [52].…”
Section: Main Research Progress and Statusmentioning
confidence: 99%
“…The 60-channel DFB laser array produced by REC technology can control the wavelength error of 83% of the laser within ±0.20 nm and 93.5% of the laser within ±0.30 nm [51], greatly improving the yield. REC technology can not only be used in the manufacturing of parallel DFB laser arrays but also in the manufacturing of series DFB laser arrays [22] and series-parallel combined DFB laser arrays [52].…”
Section: Main Research Progress and Statusmentioning
confidence: 99%
“…13 In our previous work, we simulated the grating reflector (GR) structure to increase the output power of the laser. 14,15 In the simulation calculation, the output power can reach 130 mW. Now, we design and experimentally demonstrate the GR structure integrated into the tail of the laser, which can act as a reflector for the DFB cavity to increase output power.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous work, we simulated the grating reflector (GR) structure to increase the output power of the laser 14 , 15 . In the simulation calculation, the output power can reach 130 mW.…”
Section: Introductionmentioning
confidence: 99%
“…2(a) shows the equivalent refractive index modulation distribution along the cavity. It has a rapidly varying component (blue line) with a slowly varying envelope (red line) [3]. When the slowly changing envelope passes through the zero point, an equivalent π phase shift (π-PS) occurs.…”
mentioning
confidence: 99%
“…When the slowly changing envelope passes through the zero point, an equivalent π phase shift (π-PS) occurs. The rapidly varying period and the slowly varying envelope can be adjusted by changing P1 and P2 [3]. For a cavity length L=3.5 mm and with P1=1165 nm and P2 =1163.5 nm, the two π-PSs are located at 1/3L and 2/3L.…”
mentioning
confidence: 99%