Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Tominari,; Wada, Yasuhiro; Tokunaga,; Koyu,; Kubo,; Udo,; Seto,; Ohhata,; Hosoe,; Kiyota,; Washio,; Hashimoto, Y.

doi:10.1109/bipol.2003.1274946

Cited by 12 publications

(6 citation statements)

References 7 publications

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“…With regard to the suppression of boron outdiffusion in light of the heavy doping level used for the base-region optimization, introducing carbon into the SiGe epilayer has been proven to be effective [21], [22]. To date, this carbon doping technique has been used in many commercial SiGe HBTs [23], [24].…”

Section: Further Discussionmentioning

confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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Abstract-The base-region optimization of SiGe power heterojunction bipolar transistors (HBTs) for high-frequency microwave power amplification is investigated. It is found that employing a heavily doped base region in conjunction with a high Ge content of proper profile can effectively improve the large-signal power-gain values of SiGe HBTs while maintaining their high breakdown voltages and thus allow them to be efficiently operated with high power at higher microwave frequencies. More importantly, with such a base-region optimization, not only lateral-scaling requirements can be relaxed but also a common-base configuration for power amplification using these devices can be favored, which further enhances the power-gain values of SiGe power HBTs at high frequencies. Load-pull experimental results are presented to show the highest figure-of-merit power performance of SiGe power HBTs with an optimized base region. The power performance of SiGe power HBTs operated at X -band with different base-region designs was also compared to illustrate the significant benefits that result from the base-region optimization.Index Terms-Common base (CB), doping profile, figureof-merit (FOM), load pull, microwave, power amplification, power gain, SiGe heterojunction bipolar transistors (HBTs).

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Section: Further Discussionmentioning

confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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“…It has previously been reported that bandgap grading produced by a graded germanium profile in the base region induces drift electric field, which aids minority carrier transport through the base region, so we chose a step-shape germanium profile (Fig. 2) [14]. This germanium profile, which increases from 10-15 % in the p-SiGe layer of the intrinsic base region to 22-30 % in the i-SiGe layer, is formed to generate a drift electric field resulting in higher frequency operation as well as the graded germanium profile.…”

Section: Table 1 Pattern Dependency For P-sige Epitaxial Growthmentioning

confidence: 99%

“…The coverage of the epi-layers in this narrow 55-nm cavity is insufficient at the 10 Torr growth pressure in the LPCVD because the thickness of the i-SiGe layer in the cavity tends to be thinner than that outside the cavity. SEG layers are grown at a growth pressure of 10 Torr to become convex, so we used a pressure lower than 5 Torr to form a flat i-SiGe layer for making sufficient base contact [14].…”

Section: B Reduction Of Base Resistancementioning

confidence: 99%

“…There are two approaches to forming a SiGe intrinsic base region [13]: blanket epitaxial growth over the entire area of a wafer and selective epitaxial growth (SEG) on only the Si and poly-Si layers. The SEG approach has the advantage of enabling production of an almost perfect self-aligned structure without applying any complex additional processes [14]- [18]. When the blanket epitaxial growth is used for an intrinsic base region, selective boron-doped poly-Si growth has been applied to form a raised extension base layer which enables formation of a self-aligned structure [19]- [22].…”

Section: Introductionmentioning

confidence: 99%

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SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

Hashimoto

Tokunaga

Fukumoto

et al. 2014

IEEE J. Electron Devices Soc.

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A self-aligned SiGe HBT technology achieving a cutoff frequency (f T ) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p + intrinsic base region was raised to 27.4% to improve f T , and boron concentration in the intrinsic base region reached 2.4 × 10 20 cm −3 as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (f MAX ) of 325 GHz. This technology can be applied to optical and mm wave communication systems.

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“…5]). In a different study [16], as-grown SiGeC base profiles with a concentration up to 3.5 10 20 and a width down to 1.2 nm were demonstrated using selective epitaxy. Possible solutions for the collector may be an implanted buried layer and epitaxy at the beginning of the process flow of the bipolar module (after the primary steps of thermal treatment) or lowtemperature epitaxy for both layers at a later stage.…”

Section: Process Integration and Potential Issuesmentioning

confidence: 99%

Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling

Schröter

Wedel

Heinemann

et al. 2011

IEEE Trans. Electron Devices

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The overall purpose of this paper is the prediction of the ultimate electrical high-frequency performance potential for SiGeC HBTs under the constraints of practical applications. This goal is achieved by utilizing advanced device simulation tools with parameters calibrated to experimental results of most advanced existing technologies. In addition, detailed electrostatic and electrothermal simulations are performed for determining the parasitic capacitances, temperature increase, and safe operating area of aggressively scaled devices. The important figures of merit are then determined from circuit simulation employing an accurate compact model incorporating all relevant physical effects. Based on the vertical profile found in Part I, this paper focuses on achieving a balanced device design by lateral scaling. It is shown that the peak values of (f T , f max ) around (1, 1.5) THz may be achievable. Such a performance limit provides still significant headroom for further developing existing processes and makes SiGeC HBTs well-suitable for highly integrated millimeter-wave applications operating within the low-end of the terahertz gap.

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Study on extremely thin base SiGe:C HBTs featuring sub 5-ps ECL gate delay

Cited by 12 publications

References 7 publications

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling

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