Study on Immersion Tin Process by Electrochemical Methods and Molecular Orbital Theory

Zhao, Jie; Li, Ning; Cui, Guofeng; Zhao, Jianwei

doi:10.1149/1.2358119

Cited by 21 publications

(15 citation statements)

References 27 publications

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“…[22][23][24][25] However, the effective Ni-activation method for Cu substrate has not been successfully developed. Among the methods of surface modification of Cu, the replacement deposition of Sn-Ni alloy 26 and Sn [27][28][29] using thiourea as the complex for Cu may provide a feasible approach for Ni-activation. 30,31 The electrode potential of Cu can shift to negative direction in high concentration solution of thiourea due to the active dissolution of Cu.…”

mentioning

confidence: 99%

Replacement Deposition of Ni-S Films on Cu and Their Catalytic Activity for Electroless Nickel Plating

Tian

Xiao

et al. 2013

J. Electrochem. Soc.

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Highnic GroupA Ni-S film was prepared on Cu substrate via the replacement reaction due to the quite negative electrode potential of Cu in high concentrated thiourea solution. A lower pH environment was facilitated to form more uniform Ni-S film. The sulfur content in the Ni-S film increased with the increase of deposition time and the rise of pH in solution. Relative to pure Ni, the existence of sulfur in the Ni-S film was found to result in different electrochemical properties. More importantly, constant current discharge curve and anodic polarization curve measurements indicated that the Ni-S film with higher sulfur content was more prone to be passivated, with negative influences on its catalytic activity. Polarization curve, electrochemical impedance spectroscopy and open circuit potential measurements were employed to investigate the catalytic activity of the Ni-S film for hypophosphite oxidation and electroless nickel (EN) plating. With the optimization of sulfur content by plating conditions, we could significantly improve the catalytic activity of the Ni-S film for hypophosphite oxidation and consequently for EN plating. Compared with the traditional Pd film, the Ni-S film exhibited a comparable catalytic activity, with a uniform electroless Ni-P layer obtained during the EN plating. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.034303jes] All rights reserved

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confidence: 99%

Replacement Deposition of Ni-S Films on Cu and Their Catalytic Activity for Electroless Nickel Plating

Tian

Xiao

et al. 2013

J. Electrochem. Soc.

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“…2b and c), implying the superior film quality of NIR-Perov layer without any oxidation of Sn 2+ . Notably, the absence of a Sn 4+ peak substantiated that a thiourea additive (see "Methods") was an effective anti-oxidative agent for protecting Sn 2+ cations from the undesirable oxidation 40 . The results of UV-Vis-NIR spectroscopy (Fig.…”

Section: Resultsmentioning

confidence: 95%

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

Kim

Yoo

et al. 2022

Nat Commun

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The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

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“…The Cu + /Cu potential becomes lower than that of Sn 2+ /Sn, resulting in electroless tin deposition on copper. Once a thin film of tin is formed, the replacement reaction begins to limit itself until a certain film thickness is reached, however it may continue in the presence of reducing agents [47,48,49,50].…”

Section: Manufacturing Of Copper/epoxy Jointsmentioning

confidence: 99%

Copper/Epoxy Joints in Printed Circuit Boards: Manufacturing and Interfacial Failure Mechanisms

2019

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Printed circuit boards (PCBs) have a wide range of applications in electronics where they are used for electric signal transfer. For a multilayer build-up, thin copper foils are alternated with epoxy-based prepregs and laminated to each other. Adhesion between copper and epoxy composites is achieved by technologies based on mechanical interlocking or chemical bonding, however for future development, the understanding of failure mechanisms between these materials is of high importance. In literature, various interfacial failures are reported which lead to adhesion loss between copper and epoxy resins. This review aims to give an overview on common coupling technologies and possible failure mechanisms. The information reviewed can in turn lead to the development of new strategies, enhancing the adhesion strength of copper/epoxy joints and, therefore, establishing a basis for future PCB manufacturing.

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Study on Immersion Tin Process by Electrochemical Methods and Molecular Orbital Theory

Cited by 21 publications

References 27 publications

Replacement Deposition of Ni-S Films on Cu and Their Catalytic Activity for Electroless Nickel Plating

Replacement Deposition of Ni-S Films on Cu and Their Catalytic Activity for Electroless Nickel Plating

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

Copper/Epoxy Joints in Printed Circuit Boards: Manufacturing and Interfacial Failure Mechanisms

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