Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

Abstract

In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (t FE ) on transfer and RF/analog characteristics such as transconductance (g m ), total gate capacitance (C gg ), cut off frequency (f t ), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of t FE on linearity figure of merits (FoMs), higher order harmonics (g m2 and g m3 ), voltage intercept points (VIP 2 and VIP 3 ), third order power intercept point (IIP 3 ), third order intermodulation distortion (IMD 3 ), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking t FE as a parameter. The noise spectral densities of Fe-FinFET taking t FE as parameter is also highlighted. The scaling of t FE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of t FE . It is also perceived that linearity and HD parameters are dependent on scaling of t FE . Results reveal that with increase in t FE , RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in t FE value. The increased in t FE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.

Performance optimization of high-K GAA-PZT negative capacitance FET MFIS silicon nanowire for low power RFIC and analog applications

“…Figure 4(b) portrays the variation of g m for various t fe . Transconductance of GAA -NCFET increases as compared to baseline GAAFET due to the incorporation of FE layer, which yields higher rate of change of current [35]. At higher gate voltage g m decreases due to degradation of carrier mobility [34], nevertheless presented device best suits for low power RF applications.…”

“…It is apparent from the figure that TFP is maximum for FE thickness of 20 nm which can also be inferred from the conjunction of g m and f T as represented in figure 4(b) and figure 4(d), respectively the peak values of which is illustrated in figure 4(f). Figure 5(a) portrays the ratio g m /I ds , known as, the transconductance generation factor which is a very important parameter for low power circuit design [18,35] and it is significantly higher in subthreshold region than in saturation mode, resulting in high gain. The value of g m /I ds for the baseline GAAFET at I ds = 9.65×10 -12 A is approximately 65 V −1 but the value of g m /I ds for GAA NCFET has been found to be 226 V −1 at I ds = 1.4×10 -6 A and it is highest for t fe = 20 nm among different considered t fe .…”

Design insights into RF /analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

“…The expressions for and are given as: 36 The effect of spacers on multi‐fin SOI FET is shown in Figure 12(A,B), an increase in spacer dielectric value , and value also increases. The negative value of is due to , which decreases due to mobility degradation at higher gate bias.…”

Technology computer‐aided design simulation of G e‐source double‐gate S i‐tunnel Field Effect Transistor: Radio frequency and linearity analysis

“…There are some advantages in cylindrical gate TFETs with a source pocket doping in terms of analog, linearity, and RF performance 21 . The effect of adding a ferroelectric layer on RF/analog and linearity analysis for the ferroelectric finFET is also studied 22 . Several research works have been published based on the analog/RF performance of various TFETs 23–25 .…”

“…21 The effect of adding a ferroelectric layer on RF/analog and linearity analysis for the ferroelectric fin-FET is also studied. 22 Several research works have been published based on the analog/RF performance of various TFETs. [23][24][25] In the high-frequency range, the nonquasi-static (NQS) approach of conventional MOSFET can be applied for TFET.…”