To
date, few studies of the mobility–stretchability properties
of N-type semiconductors, including naphthalenediimide (NDI)-based
polymers, have been conducted, and the preparation of intrinsically
stretchable N-type semiconducting polymers is very important in the
construction of stretchable electronics. In this study, three NDI-based
random terpolymers are synthesized by introducing functionalized conjugation
break spacers (CBSs) with ester, sulfone, and amide groups. N-type
semiconducting polymers with ester and amide-based CBSs undergo conformational
reorganization during stretching, as evidenced by the progressive
evolution of mixed edge-on and face-on orientations, as well as the
increased UV–vis dichroic ratio. This phenomenon is attributed
to the improved chain conformability and ductility from the randomized
distribution of the CBSs along the polymer backbone with more planar
CBSs. Therefore, polymers with ester-based CBSs achieve superior orthogonal
electron mobility (μe) >0.005 cm2 V–1 s–1 and an average μe retention of 61% after 400 cyclic stretching at 60% strain.
To the best of our knowledge, this study is the first to decipher
the mobility–stretchability properties of N-type semiconducting
polymers that warrant further investigation for constructing intrinsically
stretchable and wearable electronics.