Study on material removal mechanism in ultrasonic chemical assisted polishing of silicon carbide

Chen, Xin; Liang, Yingdong; Cui, Zhijie; Meng, Fanwei; Zhang, Chao; Chen, Liaoyuan; Yu, Tianbiao; Zhao, Ji

doi:10.1016/j.jmapro.2022.11.014

Cited by 17 publications

(4 citation statements)

References 45 publications

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“…From Figure 10 D,F, it can also be seen that the optimized surface exhibits more uniform and smaller undulations when the height range is controlled at the same 0.15 µm, which verifies the improvement in surface roughness and surface finish. Furthermore, in our previous study [ 17 ], the surface roughness was 17.6 nm in UP with an amplitude of 9 μm, and the optimization in the validation experiment resulted in an improvement of 26.13%, which also reveals the effectiveness of optimization.…”

Section: Resultsmentioning

confidence: 67%

“…Based on the previous studies [ 17 , 18 ], it was found that ultrasonic factors have less effect on polishing characteristics than the mechanical–physical factors. Therefore, the ultrasonic amplitude and frequency were fixed to 10 μm and 25 kHz, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Over the past few years, we have been committed to the research of ultrasonic polishing. In our earlier research [ 17 , 18 ], a method of ultrasonic polishing coupled with chemical effects on a self-built 5-axis linkage polishing machine was proposed. Previous polishing studies for the difficult-to-machine characteristics of silicon carbide have shown that the ultrasonic and chemical factors are only a secondary effect, and that the mechanical effect still occupies the main function.…”

Section: Introductionmentioning

confidence: 99%

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Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis

Chen,

Xu,

Meng

et al. 2023

Materials

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As high-level equipment and advanced technologies continue toward sophistication, ultrasonic technology is extensively used in the polishing process of difficult-to-process materials to achieve efficiently smooth surfaces with nanometer roughness. The polishing of silicon carbide, an indispensable difficult-to-machine optical material, is extremely challenging due to its high hardness and good wear resistance. To overcome the current silicon carbide (SiC) ultrasonic polishing (UP) process deficiencies and strengthen the competitiveness of the UP industry, the multi-objective optimization based on the Taguchi–GRA method for the UP process with SiC ceramic to obtain the optimal process parameter combination is a vital and urgently demanded task. The orthogonal experiment, analysis of variance, grey relational analysis (GRA), and validation were performed to optimize the UP schemes. For a single objective of roughness and removal rate, the influence degree is abrasive size > preloading force > abrasive content > spindle speed > feed rate, and spindle speed > abrasive size > feed rate > preloading force > abrasive content, respectively. Moreover, the optimal process combination integrating these two objectives is an abrasive content of 14 wt%, abrasive size of 2.5 μm, preloading force of 80 N, spindle speed of 8000 rpm, and feed rate of 1 mm/s. The optimized workpiece surface morphology is better, and the roughness and removal rate are increased by 7.14% and 28.34%, respectively, compared to the best orthogonal group. The Taguchi–GRA method provides a more scientific approach for evaluating the comprehensive performance of polishing. The optimized process parameters have essential relevance for the ultrasonic polishing of SiC materials.

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Section: Resultsmentioning

confidence: 67%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis

Chen,

Xu,

Meng

et al. 2023

Materials

Self Cite

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show abstract

“…Micromachines 2024, 15, 754 2 of 13 Furthermore, some researchers have experimentally investigated the effects of factors such as ultrasonic waves [9], abrasive concentration [10], abrasive particle size [11], temperature [12], pressure [13], and others in removing SiC materials. Shen et al utilized XPS to infer the types of surface products and the potential chemical reactions occurring on SiC surfaces post-CMP based on spectral characteristics [14].…”

Section: Introductionmentioning

confidence: 99%

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Man,

Sun,

Wang

et al. 2024

Micromachines

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To elucidate the atomic mechanisms of the chemical mechanical polishing (CMP) of silicon carbide (SiC), molecular dynamics simulations based on a reactive force field were used to study the sliding process of silica (SiO2) abrasive particles on SiC substrates in an aqueous H2O2 solution. During the CMP process, the formation of Si-O-Si interfacial bridge bonds and the insertion of O atoms at the surface can lead to the breakage of Si-C bonds and even the complete removal of SiC atoms. Furthermore, the removal of C atoms is more difficult than the removal of Si atoms. It is found that the removal of Si atoms largely influences the removal of C atoms. The removal of Si atoms can destroy the lattice structure of the substrate surface, leading the neighboring C atoms to be bumped or even completely removed. Our research shows that the material removal during SiC CMP is a comprehensive result of different atomic-level removal mechanisms, where the formation of Si-O-Si interfacial bridge bonds is widespread throughout the SiC polishing process. The Si-O-Si interfacial bridge bonds are the main removal mechanisms for SiC atoms. This study provides a new idea for improving the SiC removal process and studying the mechanism during CMP.

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Magnetic field-assisted finishing: mechanism, application, and outlook

Yan,

Yang,

et al. 2023

Int J Adv Manuf Technol

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Study on material removal mechanism in ultrasonic chemical assisted polishing of silicon carbide

Cited by 17 publications

References 45 publications

Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis

Multi-Objective Optimization in Ultrasonic Polishing of Silicon Carbide via Taguchi Method and Grey Relational Analysis

Atomistic Removal Mechanisms of SiC in Hydrogen Peroxide Solution

Magnetic field-assisted finishing: mechanism, application, and outlook

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