2021
DOI: 10.1007/s10854-021-06516-y
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Study on modulating the indium composition in InGaN quantum wells to improve the luminous efficiency of GaN LED

Abstract: This study primarily used metal-organic chemical vapor deposition to grow gallium nitride (GaN) light-emitting diode (LED) structures with InGaN quantum wells (QWs). During the InGaN QW growing process, an identical concentration of trimethylindium gas was prepared and introduced at different times (Before(B), Middle(M), and After(A)) into the QW structures for an investigation of the variation in GaN LED luminous efficacy. Because of segregation resulting from the different concentrations of In content of the… Show more

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Cited by 1 publication
(3 citation statements)
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“…29−31 The absorption range of InGaN/GaN MQWs is tunable from UV to infrared depending on the In content. 32,33 To pursue the commercial-scale use of GaN, more alterations, such as nanostructuring 34 and combining with cocatalysts, are required. 35,36 Plasmonic photocatalysts have evolved to address material deficiencies.…”
Section: Introductionmentioning
confidence: 99%
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“…29−31 The absorption range of InGaN/GaN MQWs is tunable from UV to infrared depending on the In content. 32,33 To pursue the commercial-scale use of GaN, more alterations, such as nanostructuring 34 and combining with cocatalysts, are required. 35,36 Plasmonic photocatalysts have evolved to address material deficiencies.…”
Section: Introductionmentioning
confidence: 99%
“…Materials with reported high efficiency typically rely on the ultraviolet (UV) part of the solar spectrum, which does not provide enough portions of solar energy for commercial PEC water splitting. For hydrogen generation, emphasis on the visible spectrum seems promising. The absorption range of InGaN/GaN MQWs is tunable from UV to infrared depending on the In content. , …”
Section: Introductionmentioning
confidence: 99%
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